Automatic full quantum analysis of CV measurements for bulk and SOI devices

M. Charbonnier; C. Leroux; F. Allain; A. Toffoli; G. Ghibaudo; G. Reimbold

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Automatic full quantum analysis of CV measurements for bulk and SOI devices

机译：批量和SOI器件CV测量的自动全量子分析

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摘要

We propose a new automatic method for analysing capacitance versus voltage measurement of metal-oxide-semiconductor (MOS) devices. Based on a quantum simulation of the semiconductor capacitance, this method allows the extraction of the flat band voltage and equivalent oxide thickness even if only a small part of the measurement is relevant. This is a strong advantage for analysing different capacitances in one time, as well as dealing with high interface states densities. Moreover, this method can be applied in accumulation regime as well as in inversion regime. It is consequently a good solution to deal with SOI devices.

机译：我们提出了一种新的自动方法来分析金属氧化物半导体（MOS）器件的电容与电压的关系。基于半导体电容的量子模拟，即使只涉及很小一部分测量，该方法也可以提取平带电压和等效氧化物厚度。这是一次分析不同电容以及处理高接口状态密度的强大优势。而且，该方法可以应用于累积方案以及反转方案中。因此，这是处理SOI设备的一个很好的解决方案。

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来源
《Microelectronic Engineering》 |2011年第12期|p.3404-3406|共3页
作者
M. Charbonnier; C. Leroux; F. Allain; A. Toffoli; G. Ghibaudo; G. Reimbold;
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作者单位

CEA-LETI Minatec, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-LETI Minatec, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-LETI Minatec, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-LETI Minatec, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

IMEP Minatec, 3 parvis Louis Neel, BP 257, 38016 Grenoble Cedex, France;

CEA-LETI Minatec, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
capacitance versus voltage; automatic; quantum simulation; SOI; interface states densities;

机译：电容与电压自动;量子模拟所以我;界面态密度;

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Automatic full quantum analysis of CV measurements for bulk and SOI devices

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