Polarimetry of illumination for 193 nm immersion lithography

Hiroshi Nomura; Yohko Furutono

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Polarimetry of illumination for 193 nm immersion lithography

机译：193 nm浸没式光刻的照明偏振法

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摘要

We have constructed a theory of polarimetry of illumination used in 193 nm lithography equipments, fabricated a polarimeter mask, and demonstrated it for a hyper-NA (numerical aperture) immersion lithography scanner. The polarimeter mask comprises newly developed thin polarizers and wide-view-angle quarter-wave (λ/4) plates. Although a light traveling through these polarization devices on the polarimeter mask reaches an image detector at the wafer level through a projection optics, Stokes parameters of the illumination light can be measured with no influence from polarization characteristics of the projection optics between the mask and the image detector.

机译：我们构建了用于193 nm光刻设备的照明偏振理论，制造了旋光仪掩模，并在hyper-NA（数值孔径）浸没式光刻扫描仪上进行了演示。旋光仪掩模包括新开发的薄偏振器和广角四分之一波（λ/ 4）板。尽管穿过偏振计掩模上的这些偏振器件的光通过投影光学器件到达晶片级的图像检测器，但是可以在不受掩模和图像之间的投影光学器件的偏振特性影响的情况下测量照明光的斯托克斯参数。探测器。

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来源
《Microelectronic Engineering》 |2008年第7期|p.1671-1675|共5页
作者
Hiroshi Nomura; Yohko Furutono;
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作者单位

Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
polarimetry; immersion lithography; stokes parameters;

机译：旋光法;浸没式光刻;焦炭参数;

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专利

1. Simulation of the 45-nm half-pitch node with 193-nm immersion lithography-imaging interferometric lithography and dipole illumination [J] . Abani Biswas, Steven R. J. Brueck Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第1期

机译：用193nm浸没式光刻成像干涉光刻和偶极子照明对45nm半节距节点进行仿真
2. Simulation of the 45-nm half-pitch node with 193-nm immersion lithography-imaging interferometric lithography and dipole illumination [J] . Abani Biswas, Steven R. J. Brueck Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第1期

机译：用193nm浸没式光刻成像干涉光刻和偶极子照明对45nm半节距节点进行仿真
3. Phase-shifting mask polarimetry: monitoring polarization at 193-nm high numerical aperture and immersion lithography with phase shifting masks [J] . Gregory R. McIntyre, Andrew R. Neureuther Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2005,第3期

机译：相移掩膜偏振法：使用相移掩膜监测193 nm高数值孔径的偏振和浸没式光刻
4. In-situ polarimetry of illumination for 193-nm lithography [C] . Hiroshi Nomura, Yohko Furutono Optical Microlithography XXI . 2008

机译：193 nm光刻的照明原位极化法
5. Exploration of non-chemically amplified resists based on dissolution inhibitors for 193 nm lithography. [D] . Baylav, Burak. 2010

机译：探索基于溶出抑制剂的非化学放大抗蚀剂，用于193 nm光刻。
6. Design of angle-resolved illumination optics using nonimaging bi-telecentricity for 193 nm scatterfield microscopy [O] . Martin Y. Sohn, Bryan M. Barnes, Richard M. Silver -1

机译：使用非成像双远心度设计用于193 nm散射场显微镜的角度分辨照明光学器件
7. 25nm Immersion Lithography at a 193nm Wavelength [O] . Bruce W. Smith, Yongfa Fan, Michael Slocum, 2010

机译：在193nm波长下进行25nm浸入式光刻

Polarimetry of illumination for 193 nm immersion lithography

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