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Synthesis of gallium oxide nanowires and their electrical properties

机译：氧化镓纳米线的合成及其电性能

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Gallium oxide (Ga_2O_3) nanowires have been synthesized using a novel method by high-frequency inductive heating in a room temperature environment. Nanowires with high-yield were grown on silicon substrates in less than 3 min, using Ga_2O_3/graphite as the source powder. Scanning electron microscopy showed nanowire diameters of 20-40 nm and lengths up to several tens of microns, and high-resolution transmission electron microscopy verified the single-crystalline lattice of the nanowires. Electrical properties were investigated by connecting a single Ga_2O_3 nanowire in the field-effect transistor configuration. This demonstration further illustrates the feasibility of an easy and large-scale synthesis of nanomaterials by using high-frequency inductive heating.
机译：氧化镓（Ga_2O_3）纳米线已经通过一种新颖的方法通过在室温环境下的高频感应加热合成。使用Ga_2O_3 /石墨作为源粉，在不到3分钟的时间内，将高产率的纳米线生长在硅基板上。扫描电子显微镜显示纳米线的直径为20-40 nm，长度可达数十微米，高分辨率透射电子显微镜验证了纳米线的单晶格。通过在场效应晶体管配置中连接一条Ga_2O_3纳米线来研究电性能。该演示进一步说明了通过使用高频感应加热轻松，大规模合成纳米材料的可行性。

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