The photocurrent-voltage characteristic simulated of resonant tunneling photodiodes

著录项

• 来源
  《Optical and quantum electronics》 |2016年第3期|181.1-181.6|共6页
• 作者

  Haidong Lu; Bin Zhang; Fangmin Guo;

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• 作者单位

  School of Information Science Technology, East China Normal University, Shanghai, China;

  School of Information Science Technology, East China Normal University, Shanghai, China;

  School of Information Science Technology, East China Normal University, Shanghai, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Resonant tunneling diode; Double barrier resonant tunneling; Peak-valley current ratio; Ⅰ-Ⅴ; Peak current;

  机译：谐振隧道二极管;双势垒共振隧穿;峰谷电流比;Ⅰ-Ⅴ;峰值电流;