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首页> 外文期刊>Optical and quantum electronics >Direct Au-Au bonding technology for high performance GaAs/AlGaAs quantum cascade lasers
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Direct Au-Au bonding technology for high performance GaAs/AlGaAs quantum cascade lasers

机译：直接Au-Au键合技术用于高性能GaAs / AlGaAs量子级联激光器

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摘要

In this paper we investigate chip bonding technology of GaAs/AlGaAs quantum cascade lasers (QCLs). Its results have strong influence on final performance of devices and are essential for achieving room temperature operation. Various solders were investigated and compared in terms of their thermal resistance and induced stress. The spatially resolved photoluminescence technique has been applied for a device thermal analysis. The soldering quality was also investigated by means of a scanning acoustic microscopy. The particular attention has been paid to Au-Au die bonding, which seems to be a promising alternative to the choice between hard and soft solder bonding of GaAs/AlGaAs QCLs operating from cryogenic temperatures up to room temperatures. A good quality direct Au-Au bonding was achieved for bonding parameters comparable with the ones typical for AuSn eutectic bonding process. High performance room temperature operation of GaAs/AlGaAs QCLs has been achieved with the state-of-the-art parameters.
机译：在本文中，我们研究了GaAs / AlGaAs量子级联激光器（QCL）的芯片键合技术。其结果对器件的最终性能有很大影响，并且对于实现室温工作至关重要。对各种焊料进行了研究并就其热阻和感应应力进行了比较。空间分辨光致发光技术已应用于器件热分析。焊接质量也通过扫描声显微镜检查。特别关注Au-Au芯片键合，这似乎是在低温至室温下工作的GaAs / AlGaAs QCL硬焊和软焊之间选择的一种有前途的选择。与AuSn共晶键合工艺的典型参数相比，可以实现高质量的直接Au-Au键合参数。 GaAs / AlGaAs QCL的高性能室温操作已通过最新的参数实现。

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