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Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation

机译：通过速率方程仿真研究InAs / GaAs量子点半导体光放大器的增益恢复

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摘要

The gain recoveries in quantum dot semiconductor optical amplifiers (QD SOAs) are numerically studied by rate equation simulation. Similar to the optical pump-probe experiment, the injection of double 150 fs optical pulses is used to simulate the gain recovery of a weak continuous signal under different injection levels, inhomogeneous broadenings, detuning wavelengths, and pulse signal energies for the QD SOAs. The obtained gain recoveries are then fitted by a response function with multiple exponential terms to determine the response times. The gain recovery can be described by three exponential terms with the time constants, which can be explained as carrier relaxation from the excited state to the ground state, carrier captured by the excited state from the wetting layer, and the supply of the wetting layer carriers. The fitted lifetimes decrease with the increase of the injection currents under gain unsaturation, slightly decrease with the decrease of inhomogeneous broadening of QDs, and increase with the increase of detuning wavelength between continuous signal and pulse signal and the increase of the pulse energy.
机译：通过速率方程仿真对量子点半导体光放大器（QD SOA）的增益恢复进行了数值研究。与光学泵浦探针实验相似，使用双150 fs光脉冲的注入来模拟QD SOA在不同注入水平，不均匀加宽，失谐波长和脉冲信号能量下的弱连续信号的增益恢复。然后，通过具有多个指数项的响应函数拟合获得的增益回收率，以确定响应时间。增益恢复可以用具有时间常数的三个指数项来描述，这可以解释为载流子从激发态到基态的弛豫，激发态从润湿层捕获的载流子以及润湿层载流子的供应。拟合寿命随着增益不饱和条件下注入电流的增加而减小，随着QDs不均匀展宽的减小而略微减小，并且随着连续信号和脉冲信号之间失谐波长的增加以及脉冲能量的增加而增加。

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  • 来源
    《Optical and quantum electronics》 |2009年第8期|P.613-626|共14页
  • 作者

    Jin-Long Xiao; Yue-De Yang; Yong-Zhen Huang;

  • 作者单位

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing, 100083, China;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing, 100083, China;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing, 100083, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    quantum dots (QDs); semiconductor optical amplifiers (SOAs); gain recovery;

    机译：量子点（QD）;半导体光放大器（SOA）;获得恢复;

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