Numerical estimation of lattice strain, bending and generation of misfit dislocations in CdHgTe heterostructures grown on GaAs substrate

Alina Jozwikowska; Olga Markowska; Krzysztof Jozwikowski

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Numerical estimation of lattice strain, bending and generation of misfit dislocations in CdHgTe heterostructures grown on GaAs substrate

机译：在GaAs衬底生长的CDHGTE异质结构中晶格菌株，弯曲和发射脱位产生的数值估计

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Using our own computer program, we determined the spatial distribution of lattice strains in the HgCdTe heterostructure grown on a GaAs substrate. Lattice stress resulting from lattice mismatch between the substrate and the epitaxial layer and bending of the heterostructure is almost completely relaxed by misfit dislocations forming matrixes in the interfaces' areas. The average distances between dislocation lines in individual interfaces were calculated based on the minimum energy, i.e. elastic energy condition resulting from the interaction of stress fields and deformations caused by lattice misfit, bending and the presence of dislocation plus electrical energy of dislocations.

机译：使用我们自己的计算机程序，我们确定了在GaAs衬底生长的HGCDTE异质结构中晶格菌株的空间分布。用晶格与外观层之间的晶格失配导致的晶格应力和异质结构的弯曲几乎完全松弛，在接口区域中的错位位错形成基质。基于最小能量计算各个接口中的位错线之间的平均距离，即由应力场的相互作用产生的弹性能量条件，由晶格错位引起的，弯曲和位错的脱位存在的变形。

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来源
《Optical and quantum electronics》 |2020年第6期|294.1-294.14|共14页
作者
Alina Jozwikowska; Olga Markowska; Krzysztof Jozwikowski;
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作者单位

Faculty of Applied Informatics and Mathematics Warsaw University of Life Science SGGW Nowoursynowska 166 St. 02-787 Warsaw Poland;

Faculty of Advanced Technologies and Chemistry Military University of Technology gen. S. Kaliskiego 2 St. 00-908 Warsaw Poland;

Faculty of Advanced Technologies and Chemistry Military University of Technology gen. S. Kaliskiego 2 St. 00-908 Warsaw Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
CdHgTe heterostructures; Lattice strain; Bending; Misfit dislocations;

机译：CDHGTE异质结构;晶格菌株;弯曲;错过脱臼;

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1. Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique [J] . L. GELCZUK, M. DABROWSKA-SZATA, G. JOZWIAK, Acta Physica Polonica. A, General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics . 2004,第2期

机译：利用DLTS技术研究MOVPE生长的晶格不匹配的InGaAs / GaAs异质结构的错配位错
2. Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE [J] . L. Gelczuk, J. Serafinczuk, M. Dabrowska-Szata, Journal of Crystal Growth . 2008,第12期

机译：MOVPE生长的晶格失配InGaAs / GaAs异质结构中的各向异性失配应变弛豫
3. Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched In_xGa_(1-x)Sb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition [J] . Sa Hoang Huynh, Minh Thien Huu Ha, Huy Binh Do, Applied Physics Letters . 2016,第10期

机译：界面失配位错生长方式对金属有机化学气相沉积在GaAs衬底上生长的高度晶格失配的In_xGa_（1-x）Sb外延层的影响
4. Numerical estimation of lattice strain, bending and generation of misfit dislocations in HgCdTe heterostructures grown on GaAs substrate [C] . A. Jóźwikowska, O. Markowska, K. Jóźwikowski International Conference on Numerical Simulation of Optoelectronic Devices . 2019

机译：GaAs衬底上生长的HgCdTe异质结构的晶格应变，弯曲和失配位错产生的数值估计
5. Reducing Threading Dislocation in GaSb Epilayer Grown on GaAs Substrate for Photovoltaic and Thermophotovoltaic Application [D] . Mansoori, Ahmad. 2019

机译：减少在GaAs底物上生长在GaAs底物上的喘气脱位，用于光伏和蒸煮器应用
6. Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations [O] . A Jallipalli, G Balakrishnan, SH Huang, 2009

机译：具有周期性90°错配位错界面阵列的GaAs衬底上生长的高弛豫GaSb的结构分析
7. Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy [O] . Zou, J, Cockayne, DJH, RussellHarriott, JJ 1997

机译：由分子束外延生长的InGaAs / GaAs异质结构中非均匀位错产生的错位及其临界厚度
8. Investigation of misfit dislocation configurations in MBE-grown InGaAs layers on misaligned GaAs (001) substrates [R] . Werner, P, Zakharov, N D, Chen, Y, 1992

机译：在未对准的Gaas（001）衬底上研究mBE生长的InGaas层中的错配位错构型

Numerical estimation of lattice strain, bending and generation of misfit dislocations in CdHgTe heterostructures grown on GaAs substrate

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