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首页> 外文期刊>Optical and quantum electronics >Improvement the morphology, surface roughness, and some physical properties of sputtered CuO thin films by Si
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Improvement the morphology, surface roughness, and some physical properties of sputtered CuO thin films by Si

机译：改善Si的形态，表面粗糙度和溅射CuO薄膜的一些物理性质

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摘要

Copper oxide thin films have prepared by sputtering technique. Silicon intercalated copper oxide thin films as a dopant with a ratio ranged from 2.1 to 6.2 at%. The thickness of the prepared films decreased as Si dopant increase from 153 nm for the base CuO films to 54 nm for the 6.2 at% Si containing samples. Copper atoms are presented in divalent states, whereas silicon dopant existed as a major Si-O and minor metallic Si states. X-ray photoelectron spectroscopy (XPS) proved the chemical state of CuO, while the X-ray diffraction (XRD) approved the monoclinic crystal structure. The average crystallite size values decreased as the Si content increase from 164 to 124 A. The surface morphology and roughness were examined by Atomic Force Microscopy (AFM). The existence of Si content in CuO lattice improved the morphology by reducing the grain size and surface roughness. The optical properties of studied films showed the dependence of optical band gap and static refractive index on the Si content. With the increase in Si content, the optical transition decreased from 2.18 to 1.88 eV. Moreover, the optical dispersion parameters were determined and discussed in terms of Wemple-DiDomenico model. The films are suggested to use as transparent semiconducting materials.
机译：通过溅射技术制备氧化铜薄膜。硅插入氧化铜氧化薄膜作为掺杂剂的比例为2.1至6.2at％。当Si掺杂剂从153nm增加到基础CuO膜的厚度增加至54nm时，制备的膜的厚度降低至54nm，对于含％Si的样品。铜原子以二价州呈现，而硅掺杂剂存在为主要的Si-O和次要金属Si状态。 X射线光电子能谱（XPS）证明了CuO的化学状态，而X射线衍射（XRD）批准了单斜晶结构。随着Si含量从164-124A增加，平均微晶尺寸值降低。通过原子力显微镜（AFM）检查表面形态和粗糙度。 CuO晶格中Si含量的存在通过降低晶粒尺寸和表面粗糙度来改善形态。研究的薄膜的光学性质表明光带隙和静态折射率对Si含量的依赖性。随着Si含量的增加，光学过渡从2.18降至1.88eV。此外，根据Wemple-Didomenico模型确定并讨论光学分散参数。建议薄膜用作透明半导体材料。

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  • 来源
    《Optical and quantum electronics》 |2021年第7期|374.1-374.15|共15页
  • 作者

    M. Sh. Abdel-wahab; Ahmed H. Hammad; Asim Jilani; A. Alshahrie; Ammar A. Melaibari;

  • 作者单位

    Present Address: Center of Nanotechnology King Abdulaziz University Jeddah Saudi Arabia Materials Science and Nanotechnology Department Faculty of Postgraduate Studies for Advanced Sciences Beni-Suef University Beni-Suef Egypt;

    Present Address: Center of Nanotechnology King Abdulaziz University Jeddah Saudi Arabia Electron Microscope and Thin Films Department Physics Research Division National Research Centre Dokki Giza Egypt;

    Present Address: Center of Nanotechnology King Abdulaziz University Jeddah Saudi Arabia;

    Present Address: Center of Nanotechnology King Abdulaziz University Jeddah Saudi Arabia Department of Physics Faculty of Science King Abdulaziz University Jeddah Saudi Arabia;

    Present Address: Center of Nanotechnology King Abdulaziz University Jeddah Saudi Arabia Mechanical Engineering Department Faculty of Engineering King Abdulaziz University Jeddah Saudi Arabia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CuO thin films; Si; Chemical states; X-ray diffraction; Atomic force icroscopy; Optical properties;

    机译：CuO薄膜;是;化学状态;X射线衍射;原子力显微镜;光学特性;

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