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首页> 外文期刊>Organic Electronics >Solution-processed single-crystalline organic transistors on patterned ultrathin gate insulators
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Solution-processed single-crystalline organic transistors on patterned ultrathin gate insulators

机译:在图案化的超薄栅极绝缘体上进行溶液处理的单晶有机晶体管

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摘要

Single-crystalline organic transistors of 3,ll-didecyl-dinaphtho[2,3-d:2',3'-d']benzo[l,2-b:4,5-b']dithiophene (C_(10)-DNBDT-NW) and 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno [3,2-b]thiophene (C_(10)-DNTT) were fabricated by solution processes on top of the patterned hybrid ultrathin gate dielectrics consisting of 3.6 nm-thick aluminum oxide and self-assembled monolayers (SAMs). Due to the excellent crystallinity of the channel films, bottom-gate and top-contact field-effect transistors exhibited the average field-effect mobility of 3.7 cm~2/V s and 4.3 cm~2/V s for C_(10)-DNBDT-NW and C_(10)-DNTT, respectively. These are the first successful devices of solution-processed single-crystalline transistors on ultrathin gate dielectrics with the mobility above 1 cm~2/V s, opening the way to develop low-power-consumption and high-performance printed circuits.
机译:3,II-二癸基-二萘并[2,3-d:2',3'-d']苯并[1,2-b:4,5-b']二噻吩的单晶有机晶体管(C_(10) -DNBDT-NW)和2,9-二癸基-二萘并[2,3-b:2',3'-f] thieno [3,2-b]噻吩(C_(10)-DNTT)制备在由3.6纳米厚的氧化铝和自组装单层(SAM)组成的图案化混合超薄栅极电介质上。由于沟道膜的出色结晶度,底栅和顶接触场效应晶体管对C_(10)-的平均场效应迁移率分别为3.7 cm〜2 / V s和4.3 cm〜2 / V s DNBDT-NW和C_(10)-DNTT。这些是在超薄栅极电介质上进行溶液处理的单晶晶体管的首批成功器件,其迁移率超过1 cm〜2 / V s,为开发低功耗和高性能印刷电路开辟了道路。

著录项

  • 来源
    《Organic Electronics》 |2014年第6期|1184-1188|共5页
  • 作者单位

    Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Chiba, Japan,Department of Applied Physics, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Osaka, Japan;

    Organic Materials and Devices, Institute of Polymer Materials, Department of Materials Science, Friedrich-Alexander-University of Erlangen-Nuemberg, Martensstrasse 7, 91058 Erlangen, Germany;

    Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Chiba, Japan,PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;

    Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Chiba, Japan;

    Emergent Materials Department, Advanced Science Institute, RIKEN, Wako, Saitama 351-0198, Japan;

    Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Chiba, Japan;

    Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Chiba, Japan;

    Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Chiba, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Organic transistor; Single crystal; Self-assembly monolayer; Hybrid Dielectrics; Solution process;

    机译:有机晶体管;单晶;自组装单层;混合电介质;解决过程;

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