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首页> 外文期刊>Photovoltaics, IEEE Journal of >Control of Crack Formation for the Fabrication of Crack-Free and Self-Isolated High-Efficiency Gallium Arsenide Photovoltaic Cells on Silicon Substrate
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Control of Crack Formation for the Fabrication of Crack-Free and Self-Isolated High-Efficiency Gallium Arsenide Photovoltaic Cells on Silicon Substrate

机译：硅基板上无裂纹和自隔离高效砷化镓光伏电池的裂纹形成控制

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摘要

We proposed a new scheme, controlling the crack formation by notch patterns, to fabricate self-isolated high-efficiency gallium arsenide (GaAs)-based solar cells on a silicon (Si) substrate. The notch patterns introduced into the Si substrate were found to successfully generate the crack-free areas of 2 mm × 2 mm size separated by the cracks for the 5.8-μm-thick GaAs layers on it. The individual solar cells on the crack-free areas were confirmed to be electrically isolated from one another by the well-defined crack array. The open-circuit voltage and the efficiency of the crack-free cell were improved to 0.87 V and 18.0%, respectively, from 0.78 V and 14.7% for the cell with 33.2 cm−1 of linear crack density.
机译：我们提出了一种新的方案，通过缺口图案控制裂纹的形成，以在硅（Si）基板上制造自隔离的高效砷化镓（GaAs）基太阳能电池。发现引入到Si衬底中的缺口图案成功地产生了2mm×2mm大小的无裂纹区域，该区域被其上5.8μm厚的GaAs层的裂纹分开。通过明确定义的裂缝阵列，确认无裂缝区域上的各个太阳能电池彼此电隔离。无裂纹电池的开路电压和效率分别从线性裂纹密度为33.2 cm-1的电池的0.78 V和14.7％分别提高到0.87 V和18.0％。

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