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首页> 外文期刊>Nano letters >Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates
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Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates

机译：硅衬底上形态和取向受控的砷化镓纳米线

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摘要

GaAs nanowires were epitaxially grown on Si(001) and Si(111) substrates by using Au-catalyzed vapor-liquid-solid (VLS) growth in a solid source molecular beam epitaxy system. Scanning electron microscopy analysis revealed that almost all the GaAs nanowires were grown along < 111 > directions on both Si substrates for growth conditions investigated. The GaAs nanowires had a very uniform diameter along the growth direction. X-ray diffraction data and transmission electron microscopy analysis revealed that the GaAs < 111 > nanowires had a mixed crystal structure of the hexagonal wurtzite and the cubic zinc-blende. Current-voltage characteristics of junctions formed by the epitaxially grown GaAs nanowires and the Si substrate were investigated by using a current-sensing atomic force microscopy.
机译：通过在固体源分子束外延系统中使用Au催化的气液固（VLS）生长，在Si（001）和Si（111）衬底上外延生长GaAs纳米线。扫描电子显微镜分析显示，对于所研究的生长条件，几乎所有的GaAs纳米线都沿着<111>方向在两个Si衬底上生长。 GaAs纳米线沿生长方向具有非常均匀的直径。 X射线衍射数据和透射电子显微镜分析表明，GaAs <111>纳米线具有六方纤锌矿和立方闪锌矿的混合晶体结构。利用电流感应原子力显微镜研究了外延生长的GaAs纳米线与Si衬底形成的结的电流-电压特性。

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