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首页> 外文期刊>Physica Status Solidi. C, Conferences and critical reviews >High brightness LEDs for general lighting applications Using the new ThinGaN~(TM)-Technology
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High brightness LEDs for general lighting applications Using the new ThinGaN~(TM)-Technology

机译：使用新型ThinGaN〜（TM）技术的用于普通照明应用的高亮度LED

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During the last years GaN-technology has proven to fulfill the requirements of solid state lighting. Lighting requirements are mainly driven by brightness, operation voltage and lifetime. Brigthness is determined by internal efficiency as well as extraction efficiency whereas the ohmic losses determining the operating voltage are dominated by series resistance and contact resistance. Both, brightness and voltage, strongly depend on the device structure as well as the chip design. SiC based as well as Sapphire based LEDs have proven their capability for high brightness devices, still suffering from various compromises such as cost, ESD-stability, high series resistance etc. Recently OSRAM-OS has demonstrated its newly developed product line based on the so called ThinGaN~(TM) technology, a true thinfilm approach that overcomes most of the compromises mentioned. The technology allows highest brightness levels at lowest operating voltage, is scalable and supports all wavelengths. The devices act as true surface emitters with a lambertian emission pattern.
机译：在过去的几年中，GaN技术已被证明可以满足固态照明的要求。照明要求主要由亮度，工作电压和使用寿命决定。突发性由内部效率以及抽取效率决定，而决定工作电压的欧姆损耗则由串联电阻和接触电阻决定。亮度和电压都在很大程度上取决于器件结构以及芯片设计。基于SiC以及基于蓝宝石的LED已经证明了其用于高亮度器件的能力，但仍在成本，ESD稳定性，高串联电阻等各种折衷方案上遭受折磨。最近，OSRAM-OS展示了基于此类产品的新开发的产品线称为ThinGaN〜（TM）技术的一种真正的薄膜方法，可以克服上述大多数折衷方案。该技术可在最低工作电压下实现最高亮度，具有可扩展性并支持所有波长。该器件充当具有朗伯发射模式的真实表面发射器。

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