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首页> 外文期刊>Physica status solidi >Structural, electrical, and optical properties of thermally evaporated Ge-Te, Ge-Sb-Te, and Sb-Te thin films
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Structural, electrical, and optical properties of thermally evaporated Ge-Te, Ge-Sb-Te, and Sb-Te thin films

机译：热蒸发的Ge-Te，Ge-Sb-Te和Sb-Te薄膜的结构，电学和光学性质

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摘要

Thin films of GeTe, Ge_2Sb_2Te_5 and Sb_2Te_3 have been synthesized from their respective polycrystalline bulk by thermal evaporation. X-ray diffraction study of the films confirms the amorphous nature of GeTe and Ge_2Sb_2Te_5 films, but as-deposited Sb_2Te_3 film was in the crystalline form. Structural analysis has been performed for the annealed films above their crystallization temperature by XRD, which was evaluated by temperature-dependent sheet resistance measurements. The Sb_2Te_3 film, which was already crystalline, undergoes a small transition at 110 ℃. For optical studies, the transmittance and the reflectance spectra were measured over the wavelength ranges 400-2500 nm using UV-V1S-NIR spectroscopy. The optical bandgap, reflectance and optical contrast are also presented for thermally evaporated thin films. The dc electrical conductivity of the as-deposited films has been measured as a function of temperature below the phase-transition temperature, and increases exponentially with temperature. The value of the activation energy, calculated from the slope of Incr versus 1000/T, is found to decrease from one end binary GeTe to pseudobinary Ge_2Sb_2Te_5 and then to the other end binary Sb_2Te_3 films. On the basis of the pre-exponential factor, the type of conduction in these films has also been discussed in the measured temperature range.
机译：GeTe，Ge_2Sb_2Te_5和Sb_2Te_3薄膜已通过热蒸发从它们各自的多晶体中合成。薄膜的X射线衍射研究证实了GeTe和Ge_2Sb_2Te_5薄膜的非晶态性质，但沉积的Sb_2Te_3薄膜呈晶体形式。已经通过XRD对退火膜的高于其结晶温度的结构进行了分析，这通过与温度有关的薄层电阻测量来评估。已经结晶的Sb_2Te_3薄膜在110℃经历了一个小转变。对于光学研究，使用UV-V1S-NIR光谱在400-2500 nm的波长范围内测量透射率和反射光谱。还显示了热蒸发薄膜的光学带隙，反射率和光学对比度。已经测量了所沉积的薄膜的直流电导率是低于相变温度的温度的函数，并且随温度呈指数增加。发现从Incr相对于1000 / T的斜率计算出的活化能的值从一个端二进制GeTe到伪二进制Ge_2Sb_2Te_5然后到另一端二进制Sb_2Te_3膜减小。基于预指数因子，还讨论了在测得的温度范围内这些薄膜的导电类型。

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