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首页> 外文期刊>Physica status solidi (a) Applications and materials science >Design and Simulation of a-Si:H/PbS Colloidal Quantum Dots Monolithic Tandem Solar Cell for 12% Efficiency
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Design and Simulation of a-Si:H/PbS Colloidal Quantum Dots Monolithic Tandem Solar Cell for 12% Efficiency

机译：A-Si的设计和仿真：H / PBS胶体量子点整体串联太阳能电池12％效率

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摘要

Tandem solar cells (TSC) is the most promising photovoltaic technology, as it efficiently overcomes the thermalization and nonabsorption losses.In this context, thin-film/colloidal quantum dot (CQD)-based 2-terminal monolithic TSCs are designed using a-Si:H of wide bandgap (1.7 eV) as the top cell and PbS CQD of narrow bandgap (1.2 eV) as the bottom cell.Initially, top and bottom subcells are designed and calibrated to have state-of-the-art power conversion efficiencies (PCE) of 6.86% and 9.38%, respectively.Afterward, the thicknesses of the inverted bottom cell are optimized as 200 nm so as to obtain 8.34% efficiency.The standalone condition reflects current density (J_(SC))/open-circuit voltage (V_(OC)) of 9.97mAcm~(-2) and 0.91 V in the top cell and 21.28mA cm~(-2)/ 0.63 V in the bottom cell.Further, both subcells are evaluated for tandem configuration with ITO-based interlayer to provide the current matching conditions.In the proposed tandem design, the thickness of the absorber layers is optimized to achieve the highest J_(SC), which is indeed limited by the top cell, due to a lower J_(SC) value of 10.61 mA cm~(-2) in standalone conditions.Optimized tandem design with 200 nm/150 nm-thick absorber layer-based top/bottom subcell results in J_(SC) of 10.52mA cm~(-2), V_(OC) of 1.59 V, FF of 71.65%, and PCE of 12.02%.
机译：串联太阳能电池（TSC）是最有前途的光伏技术，因为它有效地克服了热化和非吸收损失。在此上下文中，基于薄膜/胶体量子点（CQD）的二末端单片TSC使用A-Si设计：H宽带隙（1.7EV）作为顶部电池和PBS CQD的窄带隙（1.2EV）作为底部电池。最终和底部的子单元设计和校准，以具有最先进的电力转换效率（PCE）分别为6.86％和9.38％。倒置底部电池的厚度优化为200nm，以获得8.34％的效率。独立状态反映了电流密度（J_（SC））/开路电路在顶部细胞中为9.97macM〜（-2）和0.91V的电压（V_（v_（oc））和底部细胞中的21.28mA cm〜（-2）/ 0.63v.further，评估两个子单元用ITO进行串联配置基于中间层，提供当前匹配条件。在拟议的串联设计中，吸收器La的厚度优化YERs以实现最高的J_（SC），其在独立条件下的10.61 mA cm〜（2）的下部J_（SC）值为10.61 mA cm〜（-2）。优化串联设计，200nm /基于150nm厚的吸收层的顶/底亚细胞，导致J_（SC）为10.52mA cm〜（-2），V_（oC）为1.59 V，FF为71.65％，PCE为12.02％。

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