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Spin susceptibility of two-dimensional transition-metal dichalcogenides

机译:二维过渡金属二卤化物的自旋敏感性

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We have obtained analytical expressions for the q-dependent static spin susceptibility of monolayer transition-metal dichalcogenides, considering both the electron-doped and hole-doped cases. Our results are applied to calculate spin-related physical observables of monolayer MoS_2, focusing especially on in-plane/out-of-plane anisotropies. We find that the hole-mediated Ruderman-Kittel-Kasuya-Yosida exchange interaction for in-plane impurity-spin components decays with the power law R~(-5/2) as a function of distance R, which deviates from the R~(-2) power law normally exhibited by a two-dimensional Fermi liquid. In contrast, the out-of-plane spin response shows the familiar R~(-2) long-range behavior. We also use the spin susceptibility to define a collective g factor for hole-doped MoS_2 systems and discuss its density-dependent anisotropy.
机译:考虑到电子掺杂和空穴掺杂的情况,我们已经获得了单层过渡金属二卤化物的q依赖性静态自旋磁化率的解析表达式。我们的研究结果被用于计算单层MoS_2的自旋相关物理可观观测值,尤其关注平面内/平面外各向异性。我们发现,平面内杂质自旋组分的空穴介导的Ruderman-Kittel-Kasuya-Yosida交换相互作用随幂律R〜(-5/2)随距离R的变化而衰减,这偏离了R〜 (-2)幂定律通常由二维费米液体表现出来。相反,面外自旋响应显示出熟悉的R〜(-2)远程行为。我们还使用自旋磁化率为空穴掺杂的MoS_2系统定义了一个集合g因子,并讨论了其与密度有关的各向异性。

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