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首页> 外文期刊>Physical review >Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface
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Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface

机译：GaAs /（Al，Ga）As异质界面上二维电子系统的巨大非饱和线性磁阻

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摘要

Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read heads. We show that a colossal nonsaturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field, reaching nearly 10 000% at 8 T, thus surpassing many known nonmagnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems an attractive candidate for on-chip magnetic field sensing.
机译：对磁场具有较大电响应的工程设备对于诸如磁场感应和磁读取头等一系列应用至关重要。我们表明，巨大的非饱和线性磁阻（NLMR）出现在以强绝缘方式存在于GaAs / AlGaAs异质结构中的二维电子系统中。当在高源漏偏压下工作时，我们的器件的磁阻几乎随磁场线性增加，在8 T时达到近10,000％，从而超过了许多已知的表现出巨大NLMR的非磁性材料。温度依赖性和迁移率分析表明，NLMR具有纯粹的经典起源，是由纳米级不均匀性驱动的。大型NLMR与较小的器件尺寸相结合，使这些系统成为片上磁场感应的诱人候选者。

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  • 来源
    《Physical review》 |2012年第8期|081203.1-081203.5|共5页
  • 作者

    M. A. Aamir; Srijit Goswami; Matthias Baenninger; Vikram Tripathi; Michael Pepper; Ian Fairer; David A. Ritchie; Arindam Ghosh;

  • 作者单位

    Department of Physics, Indian Institute of Science, Bangalore 560 012, India;

    Department of Physics, Indian Institute of Science, Bangalore 560 012, India;

    Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 OHE, United Kingdom;

    Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India;

    Department of Electrical and Electronic Engineering, University College, London WC1E 7JE, United Kingdom;

    Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 OHE, United Kingdom;

    Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 OHE, United Kingdom;

    Department of Physics, Indian Institute of Science, Bangalore 560 012, India;

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  • 关键词

    galvanomagnetic and other magnetotransport effects;

    机译：电磁和其他磁传输效应;

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