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Large magnetoresistance effect in InN epilayers

机译：InN外延层中的大磁阻效应

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摘要

We report on the large nonsaturated transverse magnetoresistance (TMR) effect in InN films grown by plasma-assisted molecular-beam epitaxy. It is proved that the origin of the TMR effect in InN epilayers is the presence of spontaneously formed In nanoparticles. The effect of the In nanoparticles on the transport properties of the InN films is discussed in detail, accompanied by supporting theoretical calculations. The role of electronic parameters of the InN semiconductor matrix as well as the size and amount of In nanoparticles, which govern the magnitude of the TMR effect, has been determined. The negative TMR effect observed in Mg-doped InN films is also considered within the same metal-semiconductor composite model. It is proposed that high Mg concentration leads to the formation of specific modification of size and arrangement of the In inclusions.
机译：我们报告了通过等离子体辅助分子束外延生长的InN膜中的大的非饱和横向磁致电阻（TMR）效应。事实证明，InN外延层中TMR效应的起源是自发形成的In纳米颗粒的存在。详细讨论了In纳米颗粒对InN薄膜传输性能的影响，并提供了理论支持。已经确定了InN半导体基体的电子参数的作用以及控制TMR效应强度的In纳米粒子的大小和数量。在同一金属-半导体复合材料模型中，还考虑了在掺Mg的InN薄膜中观察到的负TMR效应。有人提出，高浓度的镁会导致对夹杂物尺寸和排列方式的特定改变。

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  • 来源
    《Physical review》 |2010年第24期|p.245204.1-245204.5|共5页
  • 作者

    T. A. Komissarova; M. A. Shakhov; V. N. Jmerik; R. V. Parfeniev; P. Paturi; X. Wang; A. Yoshikawa; S. V. Ivanov;

  • 作者单位

    Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;

    Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;

    Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;

    Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;

    Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FIN-20014 Turku, Finland;

    State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871,People's Republic of China;

    Graduate School of Electrical and Electronic Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan;

    Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;

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  • 关键词

    galvanomagnetic and other magnetotransport effects; composite materials;

    机译：电磁和其他磁传输效应;复合材料;

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