Spin-valve Effect By Ballistic Transport In Ferromagnetic Metal (mnas)/semiconductor (gaas)rnhybrid Heterostructures

Pham Nam Hai; Yusuke Sakata; Masafumi Yokoyama; Shinobu Ohya; Masaaki Tanaka

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Spin-valve Effect By Ballistic Transport In Ferromagnetic Metal (mnas)/semiconductor (gaas)rnhybrid Heterostructures

机译：铁磁性金属（mnas）/半导体（gaas）混合异质结构中弹道输运的自旋阀效应

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We demonstrate the spin-valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal/ GaAs semiconductor/GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic NiAs-type hexagonal MnAs nanoparticles in a GaAs matrix, and acts as a spin injector and a spin detector. Although the barrier height of the GaAs/MnAs interface was found to be very small, relatively large magnetoresistance was observed. This result shows that by using ballistic transport, we can realize a large spin-valve effect without inserting a high tunnel barrier at the ferromagnetic metal/semiconductor interface.

机译：我们在完全外延的MnAs铁磁金属/ GaAs半导体/ GaAs：MnAs颗粒杂化异质结构中通过弹道传输证明了自旋阀效应。 GaAs：MnAs材料在GaAs基质中包含铁磁NiAs型六角形MnAs纳米颗粒，并用作自旋注入器和自旋检测器。尽管发现GaAs / MnAs界面的势垒高度很小，但是观察到相对较大的磁阻。该结果表明，通过使用弹道运输，我们可以实现大的自旋阀效应，而无需在铁磁金属/半导体界面处插入高隧道势垒。

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《Physical review》 |2008年第21期|636-641|共6页
作者
Pham Nam Hai; Yusuke Sakata; Masafumi Yokoyama; Shinobu Ohya; Masaaki Tanaka;
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spin polarized transport in semiconductors; electrical injection of spin polarized carriers; ballistic magnetoresistance; magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields;

机译：半导体中的自旋极化输运;自旋极化载流子的电注入;弹道磁阻;磁电子学;自旋电子学：利用自旋极化传输或集成磁场的设备;

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1. Ferromagnet (MnAs)/semiconductor (GaAs, AlAs, InAs)/ ferromagnet (MnAs) trilayer heterostructures: Epitaxial growth and magnetotransport properties [J] . M.Tanaka, K.Takahashi Journal of Crystal Growth . 2001,第期

机译：铁磁体（MnAs）/半导体（GaAs，AlAs，InAs）/铁磁体（MnAs）三层异质结构：外延生长和磁传输性能
2. Spin-polarized electron transport in ferromagnet/semiconductor heterostructures: Unification of ballistic and diffusive transport [J] . R. Lipperheide, U. Wille Physical review. B, Condensed Matter And Materials Physics . 2005,第16期

机译：铁磁体/半导体异质结构中的自旋极化电子传输：弹道和扩散传输的统一
3. Spin polarized tunneling in III-V-based heterostructures with a ferromagnetic MnAs thin film and GaAs : MnAs nanoclusters [J] . Hai PN, Yokoyama M, Ohya S, Physica, E. Low-dimensional systems & nanostructures . 2006,第1a2期

机译：具有铁磁MnAs薄膜和GaAs：MnAs纳米簇的III-V基异质结构中的自旋极化隧穿
4. Ferromagnet (MnAs)/semiconductor (GaAs, AlAs, InAs)/ ferromagnet (MnAs) trilayer heterostructures: Epitaxial growth and magnetotransport properties [C] . K. Takahashi, K. Takahashi, M. Tanaka International conference on molecular beam epitaxy . 2001

机译：铁磁性（MNAs）/半导体（GaAs，Alas，InAs）/铁磁性（MNA）三层异质结构：外延生长和磁通量
5. Studies of Ferromagnetic MnAs/GaAs Heterostructures and MnAs/InAs Spin LEDs. [D] . Kwon, Jaesuk. 2013

机译：铁磁MnAs / GaAs异质结构和MnAs / InAs自旋LED的研究。
6. Thickness dependence of the triplet spin-valve effect in superconductor–ferromagnet–ferromagnet heterostructures [O] . Daniel Lenk, Vladimir I Zdravkov, Jan-Michael Kehrle, 2016

机译：超导体-铁磁体-铁磁体异质结构中三重态自旋阀效应的厚度依赖性
7. Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures [O] . Hai, Pham Nam, Sakata, Yusuke, Yokoyama, Masafumi, 2007

机译：通过铁磁金属（mnas）中的弹道传输实现自旋阀效应/ 半导体（Gaas）混合异质结构
8. Theoretical Study of the Effect of an Algaas Double Heterostructure on Metal-Semiconductor-Metal Photodetector Performance [R] . Salem, A. F., Smith, A. W., Brennan, K. F. 1994

机译：algaas双异质结构对金属 - 半导体 - 金属光电探测器性能影响的理论研究

Spin-valve Effect By Ballistic Transport In Ferromagnetic Metal (mnas)/semiconductor (gaas)rnhybrid Heterostructures

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