...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Power Electronics, IET >Displacement damage and total ionisation dose effects on 4H-SiC power devices
【24h】

Displacement damage and total ionisation dose effects on 4H-SiC power devices

机译：位移损坏和总电离剂量对4H-SiC功率器件的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy particles (protons, alphas, electrons and neutrons). The influence of radiation on device characteristics was determined, the introduced radiation defects were identified, and the main degradation mechanisms were established. Results show that radiation leads to the creation of acceptor traps in the lightly doped drift regions of irradiated devices. Devices then degrade due to the removal of the carriers and the decrease in carrier mobility and lifetime. For unipolar devices, the gradual increase of the forward voltage is typical while the blocking characteristics remain nearly unchanged. In bipolar devices, high introduction rates of defects cause a sharp reduction of carrier lifetime. This results in shorter carrier diffusion lengths and subsequent loss of conductivity modulation leading to a sharp increase of the forward voltage drop. The irradiation also shifts the threshold voltage of power switches. That is critical, namely for metal-oxide-semiconductor field-effect transistors. According to the authors' study, the junction barrier Schottky diode and junction field-effect transistor (JFET) can be considered the most radiation-resistant SiC power devices.
机译：提出了对4H-碳化硅功率器件的位移损伤和总电离剂量影响的综合研究。不同制造商生产的功率二极管和晶体管被高能粒子（质子，α，电子和中子）照射。确定了辐射对器件特性的影响，确定了引入的辐射缺陷，并建立了主要的降解机理。结果表明，辐射导致在受辐照设备的轻掺杂漂移区中形成受体陷阱。然后，由于去除载流子以及载流子迁移率和寿命的降低，设备性能下降。对于单极器件，正向电压逐渐增加是典型的，而阻塞特性几乎保持不变。在双极型器件中，缺陷的高引入率会导致载流子寿命的急剧下降。这导致较短的载流子扩散长度和随后的电导率调制损失，导致正向电压降急剧增加。辐照还会改变电源开关的阈值电压。这至关重要，即对于金属氧化物半导体场效应晶体管而言。根据作者的研究，结型势垒肖特基二极管和结型场效应晶体管（JFET）可以被认为是最耐辐射的SiC功率器件。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号