Evolution of the MOS transistor-from conception to VLSI

著录项

• 来源
  《Proceedings of the IEEE》 |1988年第10期|P.1280-1326|共47页
• 作者

  Sah Chih-Tang;

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• 作者单位

  Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类 一般性问题;无线电电子学、电信技术;
• 关键词

  MOS integrated circuits; VLSI; digital integrated circuits; insulated gate field effect transistors; BICMOS; Dennard's one-transistor dynamic random access memory; MOS transistor; MOSFET; ferroelectric extensions; field-effect conductivity modulation concept; high-temperature superconducting wires; interconnect-wiring delay barrier; logic gate speed; memory cell density; monolithic semiconductor optical clocks; patent disclosures; semiconductor triode structures; submicron lithographic technologies; submicron silicon logic CMOS; switching speed;

  机译：MOS集成电路;VLSI;数字集成电路;绝缘栅场效应晶体管;BICMOS;Dennard的单晶体管动态随机存取存储器;MOS晶体管;MOSFET;铁电扩展;场效应电导率调制概念;高温超导线;互连-布线延迟壁垒;逻辑门速度;存储器单元密度;单片半导体光钟;专利公开;半导体三极管结构;亚微米光刻技术;亚微米硅逻辑CMOS;开关速度;