FABRICATION OF SUBMICRON STRUCTURES BY ANISOTROPICALLY ETCHING RESISTS IN AN OXYGEN PLASMA PRODUCED BY A RADIO-FREQUENCY INDUCTION DISCHARGE

I.I.AMIROV; V.A.FEDOROV

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FABRICATION OF SUBMICRON STRUCTURES BY ANISOTROPICALLY ETCHING RESISTS IN AN OXYGEN PLASMA PRODUCED BY A RADIO-FREQUENCY INDUCTION DISCHARGE

机译：射频感应放电产生的氧等离子体中的各向异性腐蚀对亚微结构的制造

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The fabrication of submicron (￣0.35um) structures by anisotropically etching various polymeric resists (photoresists, polyimide, and plasma-polymerized styrene and hexafluoropropylene films)in an oxygen plasma of an rf low-pressure(P ￣0.2 Pa)induction discharge was analyzed. It is shown that the etch anisotropy increases with incident-ion energy. Also, it rises proportionally to the ratio of the etch rate at a given energy to that at floating potential. The maximum etch rate anisotropy is observed in an oxygen + argon plasma. The products of polymer etching(CO)present in the plasma are shown to suppress the etch anisotropy.

机译：分析了在射频低压（P P0.2 Pa）感应放电的氧等离子体中各向异性刻蚀各种聚合抗蚀剂（光致抗蚀剂，聚酰亚胺以及等离子体聚合的苯乙烯和六氟丙烯膜）来制造亚微米（￣0.35um）结构的现象。。结果表明，蚀刻各向异性随着入射离子能量的增加而增加。而且，它与给定能量下的蚀刻速率与浮动电位下的蚀刻速率之比成比例地增加。在氧+氩等离子体中观察到最大蚀刻速率各向异性。显示出等离子体中存在的聚合物蚀刻（CO）产物可抑制蚀刻各向异性。

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来源
《Russian Microelectronics》 |2000年第1期|35-42|共8页
作者
I.I.AMIROV; V.A.FEDOROV;
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收录信息美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
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1. Fabrication of submicron scale vertically aligned diamond rods by mask-free oxygen plasma etching [J] . Jian-You Lin, Zhai-Chih Li, Chih-Yen Chen Diamond and Related Materials . 2011,第7期

机译：通过无掩模氧等离子体蚀刻制备亚微米级垂直排列的金刚石棒
2. Effects of discharge frequency on plasma characteristics and etching characteristics in high density Cl/sub 2/ plasma: comparison of ultrahigh-frequency plasma and radio-frequency plasma [J] . Samukawa S., Akashi H. IEEE Transactions on Plasma Science . 1998,第6期

机译：放电频率对高密度Cl / sub 2 /等离子体中的等离子体特性和蚀刻特性的影响：超高频等离子体和射频等离子体的比较
3. Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl_2/Ar/N_2 chemistry [J] . R. Dylewicz, rnR. M. De La Rue, rnR. Wasielewski, Journal of Vacuum Science & Technology . 2010,第4期

机译：通过优化的Cl_2 / Ar / N_2化学感应耦合等离子体刻蚀技术，制备InP / InGaAsP / AlGaInAs量子阱异质结构中的亚微米尺寸特征
4. FABRICATION OF SUBMICRON STRUCTURES IN POLYCRISTALLINE SILICON BY REACTIVE ION ETCHING USING FLUORINE- AND CHLORINE- CONTAINING PLASMAS [C] . C. Reyes-Betanzo, S. A. Moshkalyov, A. C. Seabra, 18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil . 2003

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8. Anisotropic and Selective Reactive Ion Etching of SiC in CHF(3) and Oxygen Plasma [R] . Pan, W., Steckl, A. J. 1986

机译：CHF（3）和氧等离子体中siC的各向异性和选择性反应离子刻蚀

FABRICATION OF SUBMICRON STRUCTURES BY ANISOTROPICALLY ETCHING RESISTS IN AN OXYGEN PLASMA PRODUCED BY A RADIO-FREQUENCY INDUCTION DISCHARGE

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