FABRICATION OF SUBMICRON STRUCTURES IN POLYCRISTALLINE SILICON BY REACTIVE ION ETCHING USING FLUORINE- AND CHLORINE- CONTAINING PLASMAS

机译：含氟和含氯等离子体通过离子轰击法制备多晶硅中的亚微结构

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

This work presents the results of a study of reactive ion etching of polycristalline silicon by using fluorine- and chlorine- containing plasmas for a CMOS transistor gate fabrication. Submicron-wide lines (as narrow as 0.25 μm) were patterned by electron beam lithography. Processes with high etch rate (up to 70 nm/min), high selectivity over gate oxide (up to 7) and high anisotropy factors (up to 1) have been developed. Two different etching regimes producing features with anisotropic profiles have been studied, characterized by: 1) strong sidewall passivation preventing lateral etching, 2) controlled lateral etching. Anisotropic structures as narrow as 90 nm wide have been produced using the latter regime, and 250 nm wide structures by the passivation- based regime. The etching mechanisms of the processes are discussed.

机译：这项工作介绍了通过使用含氟和氯的等离子体进行CMOS晶体管栅极制造对多晶硅的反应离子刻蚀的研究结果。通过电子束光刻对亚微米宽的线（窄至0.25μm）进行构图。已经开发出具有高蚀刻速率（最高70 nm / min），对栅氧化层的高选择性（最高7）和高各向异性系数（最高1）的工艺。已经研究了产生具有各向异性轮廓的特征的两种不同的蚀刻方式，其特征在于：1）强的侧壁钝化防止了横向蚀刻； 2）受控的横向蚀刻。使用后一种方法可以产生窄至90 nm宽的各向异性结构，而基于钝化的方法则可以产生250 nm宽的结构。讨论了工艺的蚀刻机理。

著录项

来源
《18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil》|2003年|p.357-362|共6页
会议地点 Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR);Sao Paulo(BR)
作者
C. Reyes-Betanzo; S. A. Moshkalyov; A. C. Seabra; J. W. Swart;
展开▼
作者单位

Instituto Nacional de Astrofisica, Optica y Electronica -INAOE, Apartado Postal 51, cp 72000, Puebla, Pue, Mexico;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词

相似文献

外文文献
中文文献
专利

1. Special Aspects of the Kinetics of Reactive Ion Etching of SiO ₂ in Fluorine-, Chlorine-, and Bromine-Containing Plasma [J] . Russian Microelectronics . 2020,第2期

机译：在氟 - ，氯 - 含溴等离子体中的SiO _{2 反应离子蚀刻动力学的特殊方面}
2. Fabrication Of Submicron Structures In Nanoparticle/polymer Composite By Holographic Lithography And Reactive Ion Etching [J] . A. Ping Zhang, Sailing He, Kyoung Tae Kim, Applied Physicsletters . 2008,第20期

机译：全息光刻和反应离子刻蚀法制备纳米颗粒/聚合物复合材料中的亚微米结构
3. FABRICATION OF SUBMICRON STRUCTURES BY ANISOTROPICALLY ETCHING RESISTS IN AN OXYGEN PLASMA PRODUCED BY A RADIO-FREQUENCY INDUCTION DISCHARGE [J] . I.I.AMIROV, V.A.FEDOROV Russian Microelectronics . 2000,第1期

机译：射频感应放电产生的氧等离子体中的各向异性腐蚀对亚微结构的制造
4. Top-Down Approach: Fabrication of Silicon Nanowires using Scanning Electron Microscope based Electron Beam Lithography Method and Inductively Coupled Plasma-Reactive Ion Etching [C] . M.N.M. Nor, U. Hashim, N.H.A. Halim, International Conference on Advancement of Materials and Nanotechnology . 2010

机译：自上而下的方法：使用扫描电子显微镜基电子束光刻方法和电感耦合等离子体反应离子蚀刻制造硅纳米线
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching [O] . Zhitian Shi, Konstantins Jefimovs, Lucia Romano, 2020

机译：通过深反应离子蚀刻制造高纵横比硅光栅
7. Fabrication and Application of Self-masked Silicon Nanostructures in Deep Reactive Ion Etching Processes [O] . Kremin Christoph 2010

机译：自掩膜硅纳米结构在深反应离子刻蚀工艺中的制备与应用

FABRICATION OF SUBMICRON STRUCTURES IN POLYCRISTALLINE SILICON BY REACTIVE ION ETCHING USING FLUORINE- AND CHLORINE- CONTAINING PLASMAS

摘要

著录项

相似文献

相关主题

期刊订阅