Special Aspects of the Kinetics of Reactive Ion Etching of SiO <sub>2</sub> in Fluorine-, Chlorine-, and Bromine-Containing Plasma

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Special Aspects of the Kinetics of Reactive Ion Etching of SiO ₂ in Fluorine-, Chlorine-, and Bromine-Containing Plasma

机译：在氟 - ，氯 - 含溴等离子体中的SiO _{2 反应离子蚀刻动力学的特殊方面}

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The influence of the type of active gas and the ratio of the concentration of the components of the CF_(4)+ Ar, Cl_(2)+ Ar, and HBr + Ar mixtures on the parameters of the plasma, steady-state concentrations of the active particles, and kinetics of reactive-ion etching of SiO_(2)is investigated. It is demonstrated that the rate of etching SiO_(2)decreases in the CF_(4)–Cl_(2)–HBr series and is characterized by nonmonotonic (with the maximum at 20–25% Ar) behaviour under the variation of the initial composition of the mixtures. It is found that the reasons for the nonmonotonicity for each of the mixtures are the increased effective probability of the interaction and decreased yield of etching due to the change in the physical parameters of the plasma and densities of the fluxes of the active particles.

机译：活性气体类型的影响和CF_（4）+ Ar，Cl_（2）+ Ar，Cl_（2）+ Ar，HBr + Ar和HBr + Ar混合物的组分的浓度与血浆，稳态浓度的参数的影响研究了SiO_（2）的活性离子蚀刻的活性颗粒和动力学。结果证明，CF_（4）-Cl_（2）-HBR系列中的蚀刻SiO_（2）的速率降低，并且在初始变化下的非单调（最大值为20-25％AR）行为。混合物的组成。发现每个混合物的非单调性的原因是由于血浆物理参数的变化和活性颗粒的势态的密度的变化而增加的相互作用的有效概率和蚀刻的屈服率降低。

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《Russian Microelectronics》 |2020年第2期|共9页
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中图分类微电子学、集成电路（IC）;
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1. Special Aspects of the Kinetics of Reactive Ion Etching of SiO ₂ in Fluorine-, Chlorine-, and Bromine-Containing Plasma [J] . Russian Microelectronics . 2020,第2期

机译：在氟 - ，氯 - 含溴等离子体中的SiO _{2 反应离子蚀刻动力学的特殊方面}
2. Inductively coupled plasma reactive ion etching of Ge-SiO2 and SiON using C2F6 and NF3-based gas mixtures [J] . N.-J. Kim, S.-Y. Lee, G.-K. Lee, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2007,第1期

机译：使用C2F6和NF3基气体混合物对Ge-SiO2和SiON进行电感耦合等离子体反应离子刻蚀
3. Determination of SF_6 reactive ion etching end point of the SiO_2/Si system by plasma impedance monitoring [J] . M.N.A. Dewan, PJ. McNally, T. Perova, Microelectronic Engineering . 2003,第1a2期

机译：通过等离子体阻抗监测确定SiO_2 / Si体系的SF_6反应离子刻蚀终点
4. FABRICATION OF SUBMICRON STRUCTURES IN POLYCRISTALLINE SILICON BY REACTIVE ION ETCHING USING FLUORINE- AND CHLORINE- CONTAINING PLASMAS [C] . C. Reyes-Betanzo, S. A. Moshkalyov, A. C. Seabra, 18th Symposium on Microelectronics Technology and Devices; 16th Symposium on Integrated Circuits and System Design; Sep 8-11, 2003; Sao Paulo, Brazil . 2003

机译：含氟和含氯等离子体通过离子轰击法制备多晶硅中的亚微结构
5. AN ELECTROSTATIC MODEL FOR THE PREDICTION OF HEATS OF FORMATION AND DIPOLE MOMENTS OF FLUORINE- AND CHLORINE- SUBSTITUTED ALKANES. [D] . BUCKLEY, GARY STEVEN. 1982

机译：预测氟和氯取代的烷烃形成热和偶极矩的静电模型。
6. On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC SiO [O] . Alexander Efremov, Byung Jun Lee, Kwang-Ho Kwon 2021

机译：硅基薄膜气相化学与反应离子蚀刻动力学的关系（SiCSiO
7. FEATURES OF SiO2 REACTIVE-ION ETCHING KINETICS IN CF4 + Ar + O2 AND C4F8 + Ar + O2 GAS MIXTURES [O] . Alexander M. Efremov, Alexander M. Sobolev 2020

机译：CF4 + Ar + O2和C4F8 + Ar + O2气体混合物中SiO2反应离子蚀刻动力学的特征

Special Aspects of the Kinetics of Reactive Ion Etching of SiO 2 in Fluorine-, Chlorine-, and Bromine-Containing Plasma

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Special Aspects of the Kinetics of Reactive Ion Etching of SiO ₂ in Fluorine-, Chlorine-, and Bromine-Containing Plasma