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首页> 外文期刊>Science and Technology of Advanced Materials >Controlled growth of silicon nanowires synthesized via solid-liquid-solid mechanism
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Controlled growth of silicon nanowires synthesized via solid-liquid-solid mechanism

机译：通过固液固机理合成的硅纳米线的受控生长

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摘要

The growth of silicon nanowires using solid-liquid-solid method is described. In this method, silicon substrates coated with a thin layer of gold were heat treated in nitrogen ambient. Gold particles started to diffuse into the silicon substrate and Au-Si alloy formed at the interface. The alloy would have molten to form liquid droplets on the substrate when temperature increases above their eutectic point, and more Si atoms diffused into these alloy droplets when heating continues. Rapid cooling of the droplet surface due to nitrogen flow into the chamber would eventually lead to the phase separation of silicon atoms from the surface of the alloy, created the nucleation and thus the growth of silicon nanowires. Controlled growth of the nanowire could be achieved by annealing the sample at 1000℃ with nitrogen flow rate set to around 1.5 l/min. The synthesized nanowires with diameter varied from 30 to 70 nm, were straight and grew along the N_2 flow. Larger amount and longer nanowires were grown when longer period of heating was applied. Nanowires with lengths more than several hundreds of micrometers were achieved by annealing the sample for 4 h.
机译：描述了使用固液固方法生长硅纳米线。在这种方法中，将涂有金薄层的硅基板在氮气环境中进行热处理。金颗粒开始扩散到硅衬底中，并在界面处形成Au-Si合金。当温度升高到其共晶点以上时，该合金将熔化而在基材上形成液滴，并且当继续加热时，更多的Si原子扩散到这些合金液滴中。由于氮气流入腔室，液滴表面的快速冷却最终将导致硅原子与合金表面的相分离，产生成核作用，从而导致硅纳米线的生长。可以通过将样品在1000℃退火，氮气流量设置为1.5 l / min左右来实现纳米线的受控生长。直径在30到70 nm之间的合成纳米线是笔直的，并且沿着N_2流生长。当施加更长的加热时间时，生长出更大数量和更长的纳米线。通过将样品退火4小时获得了长度超过几百微米的纳米线。

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