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首页> 外文期刊>Science and Technology of Advanced Materials >Spin polarized transports through a narrow-gap semiconductor wire with ferromagnetic contacts formed on InAlAs step-graded buffer layers
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Spin polarized transports through a narrow-gap semiconductor wire with ferromagnetic contacts formed on InAlAs step-graded buffer layers

机译：自旋极化传输通过窄间隙半导体导线，在InAlAs阶梯梯度缓冲层上形成铁磁接触

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摘要

We investigated the transport properties of ferromagnetic/semiconductor hybrid structures utilizing an InAs/In_(0.75)Al_(0.25)As modulation-doped heterostructures formed on a GaAs (001) substrate with In_xAl_(1-x)As step-graded buffer layers. We used NiFe as ferromagnetic electrodes for injection/detection of spin-polarized electrons, which were formed on side walls of the semiconductor mesa to contact electron channel directly. We measured magneto-transport properties of the samples with current flow between the ferromagnetic electrodes at low temperatures. Under vertical magnetic fields, magneto-resistance oscillations were clearly observed, thus the ferromagnetic electrodes worked as ohmic contacts. In addition, we successfully found spin-valve properties under parallel magnetic fields. Furthermore, we observed the enhancement of spin-valve properties by squeezing the channel width.
机译：我们研究了利用InAs / In_（0.75）Al_（0.25）As调制掺杂异质结构在GaAs（001）衬底上形成In_xAl_（1-x）As阶梯梯度缓冲层的铁磁/半导体混合结构的传输特性。我们使用NiFe作为铁磁电极来注入/检测自旋极化电子，该自旋极化电子形成在半导体台面的侧壁上以直接接触电子通道。我们在低温下在铁磁电极之间流过电流的情况下测量了样品的磁传输性质。在垂直磁场下，可以清楚地观察到磁阻振荡，因此铁磁电极起着欧姆接触的作用。此外，我们成功地发现了平行磁场下的自旋阀特性。此外，我们观察到通过压缩通道宽度可以增强自旋阀的性能。

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