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Suppression mechanism of optical gain formation in InxGa1-xN quantum well structures due to localized carriers

机译：InxGa1-xN量子阱结构中由于局部载流子引起的光增益形成的抑制机理

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摘要

We have studied the optical gain and its suppression mechanism of InxGa1-xN multiple quantum well structures with different indium compositions. The variable stripe length method and the up-conversion method were employed in this research. It was found that the optical gain spectra became broad and the differential gain decreased with increasing the indium composition. These results indicated that inhomogeneous broadening affected not only spontaneous emission but also stimulated emission. The rise time of photoluminescence under a strong excitation condition was changed from 0.95 ps to 12.4 ps depending on the indium composition. Assuming the rise time reflects the relaxation lifetime from the absorption edge energy to population inversion levels, our calculation suggested that long rise times led to gain suppression in InxGa1-xN laser diodes with larger indium compositions. (c) 2006 Elsevier Ltd. All rights reserved.
机译：我们研究了具有不同铟组成的InxGa1-xN多量子阱结构的光学增益及其抑制机理。本研究采用可变条带长度法和上转换法。发现随着铟组成的增加，光学增益谱变宽并且差分增益减小。这些结果表明，不均匀展宽不仅影响自发辐射，而且还影响受激辐射。根据铟的组成，在强激发条件下光致发光的上升时间从0.95 ps变为12.4 ps。假设上升时间反映了从吸收边能量到粒子数反转水平的弛豫寿命，我们的计算表明，较长的上升时间导致铟成分更大的InxGa1-xN激光二极管的增益抑制。 （c）2006 Elsevier Ltd.保留所有权利。

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