Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution

P. Nguyen; F. Andrieu; M. Casse; C. Tabone; P. Perreau; D. Lafond; H. Dansas; L. Tosti; C. Veytizou; D. Landru; O. Kononchuk; E. Guiot; B.-Y. Nguyen; O. Faynot; T. Poiroux

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Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution

机译：通过局部内部BOX溶解在混合UTBB /体衬底上制造晶体管

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摘要

For the first time we performed the CMOS integration on hybrid SOI/Bulk wafers obtained by the local internal dissolution technique of the buried oxide (BOX). We compared the electrical performance of transistors fabricated on hybrid wafers and co-processed Ultra-Thin Body and Buried oxide (UTBB) and bulk silicon wafers. Devices on the FDSOI and bulk parts of hybrid substrates present similar carrier mobility than the references. Moreover, diodes with high forward current are achieved on the bulk part of the hybrid wafers.

机译：我们首次在通过埋入式氧化物（BOX）的局部内部溶解技术获得的混合SOI /散装晶圆上执行CMOS集成。我们比较了在混合晶片，共处理的超薄体和埋藏氧化物（UTBB）以及块状硅晶片上制造的晶体管的电性能。与参考文献相比，FDSOI上的设备和混合衬底的主体部分具有相似的载流子迁移率。而且，在混合晶片的大部分上实现了具有高正向电流的二极管。

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来源
《Solid-State Electronics》 |2013年第12期|39-43|共5页
作者
P. Nguyen; F. Andrieu; M. Casse; C. Tabone; P. Perreau; D. Lafond; H. Dansas; L. Tosti; C. Veytizou; D. Landru; O. Kononchuk; E. Guiot; B.-Y. Nguyen; O. Faynot; T. Poiroux;
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作者单位

CEA-LETI, Minatec Campus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France,SOITEC, Pare Technologiques des Fontaines, Bemin, 38926 Crolles, France;

CEA-LETI, Minatec Campus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-LETI, Minatec Campus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-LETI, Minatec Campus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-LETI, Minatec Campus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-LETI, Minatec Campus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-LETI, Minatec Campus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-LETI, Minatec Campus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;

SOITEC, Pare Technologiques des Fontaines, Bemin, 38926 Crolles, France;

SOITEC, Pare Technologiques des Fontaines, Bemin, 38926 Crolles, France;

SOITEC, Pare Technologiques des Fontaines, Bemin, 38926 Crolles, France;

SOITEC, Pare Technologiques des Fontaines, Bemin, 38926 Crolles, France;

SOITEC, Pare Technologiques des Fontaines, Bemin, 38926 Crolles, France;

CEA-LETI, Minatec Campus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;

CEA-LETI, Minatec Campus, 17 avenue des Martyrs, 38054 Grenoble Cedex 9, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Local internal BOX dissolution; Hybrid UTBB/Bulk substrate; FDSOI; ESD protection; Diodes;

机译：局部内部BOX溶解;混合UTBB /散装基板;FDSOI;ESD保护;二极体;

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Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution

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