Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors

Ayhan A. Mutlu; Norman G. Gunther; Mahmud Rahman

首页> 外文期刊>Solid-State Electronics >Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors

【24h】

Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors

机译：亚微米MOS晶体管对亚阈值电流的二维影响分析

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

In short channel devices, the dependence of subthreshold current on drain induced barrier lowering, substrate bias, channel length, and temperature is modeled. NMOS devices down to effective channel length of 0.13 μm are considered. The model, based on drift-diffusion theory, accurately predicts such dependence as verified by results obtained using This model when compared with those obtained with numerical device simulators.

机译：在短沟道器件中，亚阈值电流对漏极引起的势垒降低，衬底偏置，沟道长度和温度的依赖性得到了建模。考虑了有效沟道长度低至0.13μm的NMOS器件。该模型基于漂移扩散理论，与使用数值设备模拟器获得的结果相比，可以准确预测这种依赖性，该依赖性已得到使用此模型获得的结果的验证。

著录项

来源
《Solid-State Electronics》 |2002年第8期|p.1133-1137|共5页
作者
Ayhan A. Mutlu; Norman G. Gunther; Mahmud Rahman;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
关键词

相似文献

外文文献
中文文献
专利

1. Effects of various surface treatments on gate leakage, subthreshold slope, and current collapse in AlGaN/GaN high-electron-mobility transistors [J] . Neung-Hee Lee, Minseong Lee, Woojin Choi, Japanese journal of applied physics . 2014,第4S期

机译：各种表面处理对AlGaN / GaN高电子迁移率晶体管中的栅极泄漏，亚阈值斜率和电流崩塌的影响
2. Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material doublegate (GCDMDG) MOSFETs [J] . Ekta Goel, Sanjay Kumar, Balraj Singh, Superlattices and microstructures . 2017,第JUNa期

机译：渐变沟道双材料双栅极（GCDMDG）MOSFET的亚阈值电流和亚阈值摆幅的二维模型
3. Two-dimensional modeling of subthreshold current and subthreshold swing of double-material-gate (DMG) strained-Si (s-Si) on SGOI MOSFETs [J] . Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, Journal of Computational Electronics . 2013,第2期

机译：SGOI MOSFET上双材料栅极（DMG）应变硅（s-Si）的亚阈值电流和亚阈值摆幅的二维建模
4. Subthreshold current for submicron LDD MOS transistor [C] . Ley-Mui Chua, Po-Ching Liu . 1993

机译：亚微米LDD MOS晶体管的亚阈值电流
5. A deep submicron drain-current and charge model for MOS transistors. [D] . Jen, Hung-Min. 1998

机译：MOS晶体管的深亚微米漏极电流和电荷模型。
6. Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors [O] . Xinnan Huang, Yao Yao, Songang Peng, 2020

机译：电荷捕获在MOS2-SiO2接口上的影响对MOS2场效应晶体管的亚阈值摆动的稳定性
7. Two-dimensional(2D) subthreshold current and subthreshold swing modeling of double-material-gate(DMG) strained-Si(s-Si) on silicon-germanium(SiGe) MOSFETs. [O] . Mukhopadhyay A K 2014

机译：硅锗（SiGe）MOSFET上的双材料栅极（DMG）应变硅（s-Si）的二维（2D）亚阈值电流和亚阈值摆幅模型。

Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors

摘要

著录项

相似文献

相关主题

期刊订阅