Subthreshold current for submicron LDD MOS transistor

机译：亚微米LDD MOS晶体管的亚阈值电流

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For LDD devices, the voltage drop in the lightly doped, n/sup -/ region will strongly affect the subthreshold current, and must be modeled accurately. The assumptions that the entire drain-source voltage drops across the drain-channel junction and that the channel is independent of V/sub DS/ no longer hold. This paper models the subthreshold current for nMOS device down to effective channel length of 0.6 /spl mu/m, based on drift-diffusion theory, taking into account the DIBL effects. The results are compared with experimental data for submicrometer nMOS devices.

机译：对于LDD器件，轻掺杂n / sup-/区域中的电压降会严重影响亚阈值电流，因此必须进行准确建模。整个漏极-源极电压在漏极-沟道结两端均下降并且该沟道与V / sub DS /无关的假设不再成立。本文基于漂移扩散理论，考虑了DIBL效应，对nMOS器件的亚阈值电流进行了建模，直至有效沟道长度为0.6 / spl mu / m。将结果与亚微米nMOS器件的实验数据进行比较。

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《》|1993年|P.1044-1047|共4页
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Ley-Mui Chua; Po-Ching Liu;
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中图分类无线电电子学、电信技术;
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1. Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors [J] . Ayhan A. Mutlu, Norman G. Gunther, Mahmud Rahman Solid-State Electronics . 2002,第8期

机译：亚微米MOS晶体管对亚阈值电流的二维影响分析
2. Monte Carlo Study of the Lateral Distributionof Gate Current Density Along the Channelof Submicron LDD MOSFET's [J] . A.Harkar, R. W.Kelsall, J. N.Ellis VLSI Design . 2001,第1a4期

机译：蒙特卡洛研究沿亚微米LDD MOSFET沟道的栅极电流密度的横向分布
3. A novel uniformly doped barrier modulated ultra-deep-submicron poly-Si thin film transistor with very low subthreshold slope [J] . Pranav Kumar Asthana, Yogesh Goswami, Shibir Basak, Semiconductor science and technology . 2014,第7期

机译：具有极低亚阈值斜率的新型均匀掺杂势垒调制超深亚微米多晶硅薄膜晶体管
4. Transconductance degradation and its correlation to the second substrate current hump of submicron NMOS LDD transistors [C] . Gutierrez D. Edmundo A., Deferm Ludo, Declerck Gilbert Solid State Device Research Conference, 1991. ESSDERC '91 . 1991

机译：亚微米NMOS LDD晶体管的跨导退化及其与第二衬底电流驼峰的关系
5. A deep submicron drain-current and charge model for MOS transistors. [D] . Jen, Hung-Min. 1998

机译：MOS晶体管的深亚微米漏极电流和电荷模型。
6. Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors [O] . Xinnan Huang, Yao Yao, Songang Peng, 2020

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7. 1D Broken-gap Tunnel Transistor with MOSFET-like On-currents and Sub-60mV/dec Subthreshold Swing [O] . Siyuranga O. Koswatta, Steven J. Koester, Wilfried Haensch 2015

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Subthreshold current for submicron LDD MOS transistor

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