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Structural characterisation of anodic SiO2 thin films on n-type Si

机译:n型Si上阳极SiO 2 薄膜的结构表征

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摘要

This article presents the results of anodic silicon dioxide (SiO2) thin film on n-type silicon substrate. A mixture of nitric acid and deionised water has been used as the electrolyte for the anodisation process. The effects of supplied voltage and oxidation time on the structural properties of film have been investigated. It has found that thickness, refractive index, density, porosity and dielectric constant of the anodised film are depending on the investigated parameters. Defect free anodic oxide with morphology of round shape spikes has been successfully grown on the substrate.
机译:本文介绍了在n型硅衬底上制备阳极二氧化硅(SiO 2 )薄膜的结果。硝酸和去离子水的混合物已被用作阳极氧化工艺的电解质。研究了供电电压和氧化时间对薄膜结构性能的影响。已经发现,阳极氧化膜的厚度,折射率,密度,孔隙率和介电常数取决于所研究的参数。具有圆形尖峰形态的无缺陷阳极氧化物已成功地在基底上生长。

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