Buffer layer free large area bi-layer graphene on SiC(0001)

C. Virojanadara; A.A. Zakharov; R. Yakimova; L.I. Johansson

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Buffer layer free large area bi-layer graphene on SiC(0001)

机译：SiC（0001）上无缓冲层的大面积双层石墨烯

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摘要

The influence of hydrogen exposures on monolayer graphene grown on the silicon terminated SiC(0001) surface is investigated using photoelectron spectroscopy (PES), low-energy electron microscopy (LEEM) and micro low-energy electron diffraction (μ-LEED). Exposures to ionized hydrogen are shown to have a pronounced effect on the carbon buffer (interface) layer. Exposures to atomic hydrogen are shown to actually convert/transform the monolayer graphene plus carbon buffer layer to bi-layer graphene, i.e. to produce carbon buffer layer free bi-layer graphene on SiC(0001). This process is shown to be reversible, so the initial monolayer graphene plus carbon buffer layer situation is recreated after heating to a temperature of about 950 ℃. A tentative model of hydrogen intercalation is suggested to explain this single to bi-layer graphene transformation mechanism. Our findings are of relevance and importance for various potential applications based on graphene-SiC structures and hydrogen storage.

机译：使用光电子能谱（PES），低能电子显微镜（LEEM）和微低能电子衍射（μ-LEED）研究了氢暴露对生长在硅终止SiC（0001）表面上的单层石墨烯的影响。暴露在离子化氢中对碳缓冲层（界面）具有显着影响。显示出暴露于原子氢实际上将单层石墨烯加碳缓冲层转化/转化为双层石墨烯，即在SiC（0001）上产生不含碳缓冲层的双层石墨烯。该过程显示为可逆的，因此在加热至约950℃的温度后，会重新产生初始的单层石墨烯加碳缓冲层的情况。建议使用氢插入的暂定模型来解释这种单层至双层石墨烯的转化机理。我们的发现对于基于石墨烯-SiC结构和储氢的各种潜在应用具有重要意义。

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来源
《Surface Science》 |2010年第2期|L4-L7|共4页
作者
C. Virojanadara; A.A. Zakharov; R. Yakimova; L.I. Johansson;
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作者单位

Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping, Sweden;

Maxlab, Lund University, S-22100 Lund, Sweden;

Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping, Sweden;

Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping, Sweden;

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正文语种 eng
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关键词
graphene; bi-layer; epitaxial; silicon carbide; LEEM; PES; hydrogenation; LEED;

机译：石墨烯双层外延碳化硅LEEM;PES;氢化;LEED;

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专利

1. Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer-SiC(0001) Interface [J] . Kotsakidis Jimmy C., Grubisic-Cabo Antonija, Yin Yuefeng, Chemistry of Materials: A Publication of the American Chemistry Society . 2020,第15期

机译：通过钙和镁插入缓冲层-SiC（0001）界面，独立N-掺杂的石墨烯
2. Buffer layer free graphene on SiC(0001) via interface oxidation in water vapor [J] . Markus Ostler, Felix Fromm, Roland J. Koch Carbon: An International Journal Sponsored by the American Carbon Society . 2014,第Null期

机译：通过水蒸气中的界面氧化在SiC（0001）上形成无缓冲层的石墨烯
3. Large homogeneous mono-/bi-layer graphene on 6H-SiC(0 0 0 1) and buffer layer elimination [J] . Virojanadara C., Yakimova R., Zakharov A.A., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2010,第37期

机译：6H-SiC（0 0 0 1）上的大型均质单层/双层石墨烯和消除缓冲层
4. Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (0001) and 4H-SiC:H surface [C] . J. P. Goss, P. R. Briddon, N. G. Wright, Silicon carbide and related materials 2009 . 2010

机译：4H-SiC（0001），（0001）和4H-SiC：H表面上物理吸附和化学吸附的单石墨烯层的密度泛函模拟
5. Probing the Properties of the Molecular Adlayers on Metal Substrates: Scanning Tunneling Microscopy Study of Amine Adsorption on Gold(111) and Graphene Nanoislands on Cobalt(0001). [D] . Zhou, Hui. 2011

机译：探索金属基底上分子吸附剂的性能：扫描隧道显微镜研究胺在金（111）和石墨烯纳米岛上吸附的钴（0001）。
6. High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001) [O] . Mahdi Hajlaoui, Haikel Sediri, Debora Pierucci, -1

机译：离轴SiC（0001）上外延三层石墨烯的高电子迁移率
7. Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer–SiC(0001) Interface [O] . Jimmy C. Kotsakidis, Antonija Grubišić-Čabo, Yuefeng Yin, 2020

机译：通过钙和镁插入缓冲层-SiC（0001）界面独立N-掺杂的石墨烯

Buffer layer free large area bi-layer graphene on SiC(0001)

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