The advent of high-performance gated vacuum emitters will have a strong impact on RF source technology. Gated vacuum emitters, typified by the field emitter array (FEA) combining the advantages of electron transport in vacuum with those of solid-state micro-fabrication, will enable the development of new classes of density modulated RF sources. Large-scale devices related to established power tube types as well as on-chip, integrable micro-devices can be anticipated. When developed, these devices may offer the system designer distinct advantages with respect to power density, efficiency, andcost. Although recent advances serve to highlight the potential for the development of FEA-based sources, significant challenges must be overcome before a new RF source technology becomes available.
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