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首页> 外文期刊>Thin Solid Films >Post-deposition catalytic-doping of microcrystalline silicon thin layer for application in silicon heterojunction solar cell
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Post-deposition catalytic-doping of microcrystalline silicon thin layer for application in silicon heterojunction solar cell

机译：用于硅异质结太阳能电池的微晶硅薄层的沉积后催化掺杂

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摘要

The silicon heterojunction (SHJ) solar cell is one of the most promising candidates for the next-generation high-efficiency mainstream photovoltaic technology. It consists of a crystalline silicon wafer coated with a stack of functional thin-films on both sides. Conventionally, intrinsic and doped hydrogenated amorphous silicon (a-Si:H) is used as the passivation layer and emitter or back surface field (BSF), respectively. Hydrogenated microcrystalline silicon (mu c-Si:H) is considered as a more advantageous alternative to the a-Si:H emitter and BSF layers due to mu c-Si:H's higher electrical conductivity giving rise to lower series resistance. In this contribution, we use the catalytic doping process, so-called "Cat-doping", to post-dope n-mu c-Si:H thin-layers in such a way that the conductivity can be increased to higher levels than those achievable in as-grown n-mu c-Si:H for the application in SHJ solar cells. We show that the conductivity of the mu c-Si:H films notably increases after the Cat-doping. We also investigated the impact of Cat-doping on the conductivity of the different mu c-Si:H and on lifetime. (C) 2017 Elsevier B.V. All rights reserved.
机译：硅异质结（SHJ）太阳能电池是下一代高效主流光伏技术最有希望的候选者之一。它由两面都涂有功能性薄膜堆栈的结晶硅晶片组成。常规上，本征和掺杂的氢化非晶硅（a-Si：H）分别用作钝化层和发射极或背表面场（BSF）。氢化微晶硅（mu c-Si：H）被认为是a-Si：H发射极和BSF层的更有利替代品，因为mu c-Si：H的较高电导率导致较低的串联电阻。在这一贡献中，我们使用催化掺杂工艺（所谓的“ Cat掺杂”）对n-mu c-Si：H薄膜进行后掺杂，以使电导率可以提高到比那些更高的水平。可用于生长在n-mu c-Si：H中的SHJ太阳能电池中。我们表明，在Cat掺杂之后，μc-Si：H薄膜的电导率显着增加。我们还研究了Cat掺杂对不同mu c-Si：H电导率和寿命的影响。 （C）2017 Elsevier B.V.保留所有权利。

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