...
机译:在硅和碳衬底上化学气相沉积富相WC薄膜
Department of Chemical Engineering, Center for Catalytic Science and Technology (CCST), University of Delaware, Newark, DE 19716, USA;
Department of Chemical Engineering, Center for Catalytic Science and Technology (CCST), University of Delaware, Newark, DE 19716, USA;
Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, USA;
Department of Chemical Engineering, Center for Catalytic Science and Technology (CCST), University of Delaware, Newark, DE 19716, USA;
Department of Chemical Engineering, Center for Catalytic Science and Technology (CCST), University of Delaware, Newark, DE 19716, USA;
CVD; tungsten carbide (WC) films; XRD; XPS; electrocatalysts;
机译:在低基板温度下通过等离子体增强化学气相沉积和热线化学气相沉积沉积的薄膜的机械和压阻特性
机译:通过化学气相沉积和电沉积在硅基板上生长的分子材料薄膜
机译:通过化学气相沉积和电沉积在硅基板上生长的分子材料薄膜
机译:用于晶体光伏太阳能电池的柔性多晶金属基板上的异质外延硅薄膜:物理气相沉积与等离子体增强化学气相沉积之间的比较
机译:在硅和碳衬底上化学气相沉积碳化钨膜。
机译:射频等离子体增强化学气相沉积(RF PECVD)反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
机译:热线化学气相沉积反应器中柔性基板上的硅薄膜沉积参数的优化
机译:衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响