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Chemical vapor deposition of phase-rich WC thin films on silicon and carbon substrates

机译:在硅和碳衬底上化学气相沉积富相WC薄膜

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摘要

Chemical vapor deposition was used to deposit tungsten carbide from a mixture of WCl_6, H_2 and C_3H_8 at 750-1050 ℃ on silicon and carbon substrates. The phase composition of the films was correlated with substrate temperature, substrate position in the reactor, and total flow rates. X-ray diffraction and X-ray photoelectron spectroscopy were employed to investigate the surface and bulk properties of the thin films. Thick, adherent films of phase-rich hexagonal WC were deposited using 1.3 × 10~3 Pa total pressure, 1050 ℃ substrate temperature, and reactant flow rates of H_2/C_3H_8/Ar/WCl_6=1.8× 10~(-2)/3.6× 10~(-3)/8.9× 10~(-4)/1.8× 10~(-4) mol/min, where Ar is the carrier gas. The surface composition was oxygen and carbon rich as compared with the bulk.
机译:化学气相沉积用于在750-1050℃下从WCl_6,H_2和C_3H_8的混合物中沉积碳化钨到硅和碳衬底上。膜的相组成与底物温度,反应器中的底物位置和总流速相关。 X射线衍射和X射线光电子能谱被用来研究薄膜的表面和整体性质。使用1.3×10〜3 Pa的总压力,1050℃的基板温度和H_2 / C_3H_8 / Ar / WCl_6 = 1.8×10〜(-2)/3.6的反应物流速沉积厚相的六方WC附着膜×10〜(-3)/8.9×10〜(-4)/1.8×10〜(-4)mol / min,其中Ar为载气。与主体相比,表面组成富含氧和碳。

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  • 来源
    《Thin Solid Films》 |2008年第12期|3847-3854|共5页
  • 作者单位

    Department of Chemical Engineering, Center for Catalytic Science and Technology (CCST), University of Delaware, Newark, DE 19716, USA;

    Department of Chemical Engineering, Center for Catalytic Science and Technology (CCST), University of Delaware, Newark, DE 19716, USA;

    Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, USA;

    Department of Chemical Engineering, Center for Catalytic Science and Technology (CCST), University of Delaware, Newark, DE 19716, USA;

    Department of Chemical Engineering, Center for Catalytic Science and Technology (CCST), University of Delaware, Newark, DE 19716, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CVD; tungsten carbide (WC) films; XRD; XPS; electrocatalysts;

    机译:CVD;碳化钨(WC)膜;XRD;XPS;电催化剂;

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