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首页> 外文期刊>Thin Solid Films >Diffusion length variation in photovoltaic cells with Bridgman-grown CuInSe_2 substrates
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Diffusion length variation in photovoltaic cells with Bridgman-grown CuInSe_2 substrates

机译：布里奇曼生长的CuInSe_2衬底在光伏电池中的扩散长度变化

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摘要

In a group of CuInSe_2-CdS-ZnO photovoltaic cells, where the absorber was a layer cut from Bridgman-grown p-type CuInSe_2 ingots, electron diffusion lengths at room temperature (L_n) were estimated by the photocurrent-capacitance method. Dark capacitance measurements were also made on the same cells against reverse bias and from Mott-Schottky plots, slope concentrations p_(MS) were determined at a reverse bias of 1.5 V. In a plot of L_n against p_(MS), it was found that, despite much scatter in the experimental points, there was an apparent trend of L_n decreasing by about an order of magnitude with increase of p_(MS) from 10~(16) to 10~(17) cm~(-3). Detailed proposals were then made to explain this trend. These were reduction of lifetime via Shockley-Read trapping with mobility decrease by impurity scattering, shunt resistance lowering by light and optical penetration depth reduction at shorter illumination wavelengths.
机译：在一组CuInSe_2-CdS-ZnO光伏电池中，其中吸收体是从Bridgman生长的p型CuInSe_2铸锭切下的一层，通过光电流电容法估算了室温下的电子扩散长度（L_n）。还对同一单元进行了反向电容的暗电容测量，并根据Mott-Schottky图，在1.5 V的反向偏置下确定了斜率浓度p_（MS）。在L_n与p_（MS）的关系图中，发现了尽管实验点有很多分散，但是随着p_（MS）从10〜（16）cm增加到10〜（17）cm〜（-3），L_n出现了明显的下降趋势。然后提出了详细的建议以解释这种趋势。这些是通过Shockley-Read捕集减少寿命，通过杂质散射降低迁移率，通过光降低分流电阻，并在较短的照明波长下降低光学穿透深度。

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