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首页> 外文期刊>Thin Solid Films >Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO_3(ZnO)_6 single-crystalline thin film
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Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO_3(ZnO)_6 single-crystalline thin film

机译：晶格匹配缓冲层上外延ZnO薄膜的生长：InGaO_3（ZnO）_6单晶薄膜的应用

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摘要

Effects of lattice-matched substrates on growth of ZnO epitaxial films were studied. ZnO thin films were grown on single-crystalline InGaO_3(ZnO)_6 (IGZO) layers, which have small lattice mismatches of ～0.8% and ～2.2% in a- and c-axes, respectively. Epitaxial ZnO films were grown with the epitaxial relationship between the ZnO film and the single-crystalline IGZO of [0001]_(ZnO)//[0001]_(IGZO)//[111]_(YSZ) and [1120]_(ZnO)//[1120]_(IGZO)//[110]_(YSZ). The use of the lattice-matched substrate and optimization of film microstructure and post-annealing condition led to atomically flat surfaces at maximum process temperatures as low as 700℃. A large Hall electron mobility ～80 cm~2 (V s)~(-1) (N_e: ～2.8 x 10~(18) cm~(-3)) was obtained even if the film thickness was only 150 nm although comparable mobilities have been reported on films having much larger thicknesses (～1000 nm) fabricated at higher temperatures ～1000℃.
机译：研究了晶格匹配衬底对ZnO外延膜生长的影响。 ZnO薄膜生长在单晶InGaO_3（ZnO）_6（IGZO）层上，在a轴和c轴上的晶格失配较小，分别为〜0.8％和〜2.2％。生长具有外延关系的外延ZnO膜，该外延关系是ZnO膜与[0001] _（ZnO）// [0001] _（IGZO）// [111] _（YSZ）和[1120] _的单晶IGZO之间的关系。 （ZnO）// [1120] _（IGZO）// [110] _（YSZ）。晶格匹配基板的使用以及薄膜微结构和后退火条件的优化导致在最高工艺温度低至700℃时原子表面平坦。即使膜厚仅为150 nm，也能获得大的霍尔电子迁移率〜80 cm〜2（V s）〜（-1）（N_e：〜2.8 x 10〜（18）cm〜（-3））据报道，在〜1000℃的较高温度下制备的具有更大厚度（〜1000 nm）的薄膜具有迁移率。

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