Lattice intrinsic defects and electrical resistivity in pyrite thin films

J.R. Ares; A. Pascual; I.J. Ferrer; C.R. Sanchez

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Lattice intrinsic defects and electrical resistivity in pyrite thin films

机译：黄铁矿薄膜的晶格固有缺陷和电阻率

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Electrical resistivity of polycrystalline pyrite thin films has been investigated at 300 K≤T≤615 K. Curved Arrhenius type plots are interpreted as due to a high density of acceptor states created by interacting Fe vacancies partially compensated by S vacancies. Mean energy value of the narrow band created by those Fe vacancies has been measured as ～0.11 eV and its standard deviation as ～0.05 eV. Implications of this view on other properties of the films are discussed.

机译：多晶黄铁矿薄膜的电阻率已在300K≤T≤615K的条件下进行了研究。弯曲的Arrhenius型图被解释为是由于相互作用的Fe空位（由S空位补偿）产生的高受体态密度。由这些Fe空位产生的窄带的平均能量值经测量为〜0.11 eV，其标准偏差为〜0.05 eV。讨论了这种观点对薄膜其他性能的影响。

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来源
《Thin Solid Films》 |2004年第3期|p.233-236|共4页
作者
J.R. Ares; A. Pascual; I.J. Ferrer; C.R. Sanchez;
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作者单位

Laboratoire de Chimie Metallurgique des Terres Rares, Rue Henri Dunant 2-8, ISCA-CNRS, 94320 Cedex, Paris, France;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
pyrite thin films; polycrystalline semiconductors; electrical resistivity; point lattice defects;

机译：黄铁矿薄膜;多晶半导体;电阻率;点晶格缺陷;

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Lattice intrinsic defects and electrical resistivity in pyrite thin films

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