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Features of Bridgman-grown CuInSe_2

机译：布里奇曼生长的CuInSe_2的特征

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Using a one-ampoule method, ingots of CuInSe_2 were grown by the vertical Bridgman technique with specific nonstoichiometric proportions of the starting elements copper, indium and selenium. With stoichiometry or an excess of selenium, the ingots were p-type. With a deficiency of selenium, n-type conductivity was obtained but with binary phases present, such as InSe, in the last zone to freeze of the ingot. Ingots were also prepared with excess copper for melt compositions corresponding to Cu_xInSe_2, where x was 1.1, 1.2 and 1.3. In the last zone to freeze of all these p-type ingots, precipitation occurred of copper containing dissolved selenium or indium. In the precipitate-free main part of these copper-excess ingots, no change of electrical resistivity was observed with increased copper content. However, in regions of the chalcopyrite adjacent to precipitated copper areas, at the end of each ingot, the resistivity was apparently increased.
机译：使用一安瓿法，通过垂直Bridgman技术以特定非化学计量比例的起始元素铜，铟和硒生长CuInSe_2锭。在化学计量或硒过量的情况下，铸锭为p型。由于硒的缺乏，获得了n型电导率，但是在最后一个区域中存在二元相（例如InSe）以冻结晶锭。还用过量的铜制备用于对应于Cu_xInSe_2的熔体组成的铸锭，其中x为1.1、1.2和1.3。在所有这些p型晶锭的最后一个冻结区域，发生了含有溶解的硒或铟的铜沉淀。在这些多余的铜锭的无沉淀的主要部分中，随着铜含量的增加，未观察到电阻率的变化。但是，在黄铜矿中与析出的铜区域相邻的区域中，在每个晶锭的末端，电阻率明显增加。

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