Effect of TiB_2, TiC, TiN on the formation and properties of semiconductive barium titanate

Kovalenko L.L.; VYunov O.I.; Homenko B.S.

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Effect of TiB_2, TiC, TiN on the formation and properties of semiconductive barium titanate

机译：TiB_2，TiC，TiN对半导体钛酸钡的形成和性能的影响

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The physico-chemical properties of semiconductive BaTiO_3 doped by TiB_2, TiC, TiN dopants have been characterized by thermogravimetric measurements, X-ray diffraction analysis, electron microscopy. Addition of the above dopants is accompanied by the formation of compounds, which affect redox reactions occurring during the synthesis of BaTiO_3 ceramic and make it possible to widen the temperature range of reduction.

机译：通过热重分析，X射线衍射分析，电子显微镜等方法对掺有TiB_2，TiC，TiN掺杂的半导体BaTiO_3的物化性质进行了表征。上述掺杂剂的添加伴随着化合物的形成，这些化合物影响在BaTiO_3陶瓷的合成过程中发生的氧化还原反应，并有可能扩大还原的温度范围。

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《Украинский химический журнал》 |1998年第1期|p.3-7|共5页
作者
Kovalenko L.L.; VYunov O.I.; Homenko B.S.;
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收录信息美国《科学引文索引》(SCI);
原文格式 PDF
正文语种 rus
中图分类化学;
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Effect of TiB_2, TiC, TiN on the formation and properties of semiconductive barium titanate

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