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Conference on spectroscopic characterization techniques for semiconductor technology

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1.Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation

机译：通过聚焦离子束植入形成的AlGaAs多量子阱结构的拉曼和光致发光表征
- 作者：Howard E. Jackson;Ahn G. Choo;Bernard L. Weiss;Joseph T. Boyd;Andrew J. Steckl;Peter Chen;Robert D. Burnham;Stephen C. Smith
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
2.Photoreflectance characteristics of AlGaAs/GaAs structures

机译：AlGaAs / GaAs结构的光反射特性
- 作者：Bernard L. Weiss;Ahn G. Choo;Howard E. Jackson
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
3.Picosecond spectroscopy in solids with a free-electron laser (Invited Paper)

机译：用自由电子激光（邀请纸）的岩秒光谱法
- 作者：Philippe M. Fauchet
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
4.Raman scattering in InxGa1-x As/GaAs superlattices grown by molecular-beam epitaxy

机译：在Inxga1-x中散射的拉曼散射，由分子束外延生长的AS / GaAs超级图案
- 作者：Monique T. Constant;N.Matrullo Univ. des Sciences et Techniques de Lille Flandres Ar tois Villeneuve dAscq Cedex France;A.Lorriaux Univ. des Sciences et Techniques de Lille Flandres Ar tois Villeneuve dAscq Cedex France;R.Fauquembergue Univ. des Sciences et Techniques de Lille Flandres Ar tois Villeneuve dAscq Cedex France;Y.Druelle Univ. des Sciences et Techniques de Lille Flandres Ar tois Villeneuve dAscq Cedex France.
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
5.Saturation spectroscopy of carriers in semiconductor multiple-quantum-well structures

机译：半导体多量子井结构中载体架的饱和光谱
- 作者：Radha Ranganathan;Jann Kaminski;Wei J. Li;Jiping Cheng;Bruce D. McCombe
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
6.Optical studies of lattice-matched and strained GaInAs/AlInAs single quantum wells

机译：晶格匹配和紧张增强的光学研究/ alinas单量子孔
- 作者：Author(s): A.Tabata INSA de Lyon Villeurbanne Cedex France;S.Moneger INSA de Lyon Villeurbanne Cedex France;Taha Benyattou;Y.Baltagi INSA de Lyon Villeurbanne Cedex France;Gerard Guillot;Alexandros Georgakilas;K.Zekentes Foundation for Research and Technology-Hellas Heraklion Crete Greece;G.Halkias Foundation for Research and Technology-Hellas Heraklion Crete Greece.
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
7.Raman spectroscopy study of interdiffusion in Si/SiGe superlattices

机译：Si / SiGe超晶格中间隙的拉曼光谱研究
- 作者：Orest J. Glembocki;Sharka M. Prokes
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
8.Reflectance difference for in-situ characterization of surfaces and epitaxial growth of GaAs on (001) GaAs

机译：对（001）GaAs的表面和GaAs外延生长的原位表征的反射差异
- 作者：Lars Samuelson;Knut Deppert;Bert Junno;Jan Jonsson;Gert Paulsson
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
9.Direct measurement of the piezoelectric field and Fermi level pinning in 111B grown InGaAs/GaAs heterostructures

机译：直接测量压电场和FERMI水平钉扎在111 B增长的InGaAs / Gaas异质结构中
- 作者：Mitra Dutta;Hongen Shen;J.Pamulapati U.S. Army Electronics Technology and Devices Lab. Fort Monmouth NJ USA;Wayne H. Chang;Michael A. Stroscio;Xiaoqiang Zhang;D.M. Kim;K.W. Chung;P.P. Ruden;Marshall I. Nathan
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
10.Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon

机译：从硅中生长的伪质基紧张Si / Si1-XGex多量子孔的光致发光
- 作者：Stefan Zollner;Reuben T. Collins;M.S. Goorsky;P.J. Wang;M.J. Tejwani;J.O. Chu;Bernard S. Meyerson;F.K. LeGoues
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
11.Spectrally resolved luminescence of InP at low temperatures using minority carrier injection from a scanning tunneling microscope tip

机译：使用少数型载体注射从扫描隧穿显微镜尖端的低温下的INP光谱解析发光
- 作者：Mats-Erik Pistol;Joakim Lindahl;Lars Montelius;Lars Samuelson
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
12.Differential reflectance spectroscopy of GaAs

机译：GaAs的差分反射光谱
- 作者：Michael Gal;C.Shwe Univ. of New South Wales Mandalay Myanmar Burma;P.Kraisingdecha Univ. of New South Wales Kensington New South Wales Australia.
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
13.Correlation between electric field temperature and carrier concentration with respect to photoreflectance lineshape at the E1 transition of GaAs

机译：GaAs E1转变的电场温度与载波浓度相对于光反射线的相关性
- 作者：Alireza Badakhshan;C.Durbin Univ. of Texas/Dallas Richardson TX USA;Robert Glosser;Kambiz Alavi;S.Nicholas Univ. of Minnesota/Duluth Duluth MN USA;D.Dale Univ. of Minnesota/Duluth Duluth MN USA;Kenneth Capuder
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
14.Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique

机译：利用新型非接触式技术的半导体和半导体微结构的电拍
- 作者：Author(s): X.Yin CUNY/Brooklyn College Brooklyn NY USA;Xinxin Guo;Fred H. Pollak;G.D. Pettit;Jerry M. Woodall;Eun-He Cirlin
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
15.In-situ electron spectroscopy studies of interaction between P and GaAs(100) surface

机译：原位电子光谱研究P和GaAs（100）表面之间的相互作用
- 作者：Xuekun Lu;Xiaoyuan Hou;Xunmin Ding;Xun Wang
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
16.Optical studies of interface roughness in GaAs/AlAs quantum-well structures (Invited Paper)

机译：GaAs / Alas量子井结构中的界面粗糙度的光学研究（邀请纸）
- 作者：Daniel Gammon;B.V. Shanabrook;D.S. Katzer
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
17.Raman scattering characterization of processing effects on GaAs planar photoconductors

机译：RAMAN散射表征GaAs平面光电导体的处理效果
- 作者：Monique T. Constant;A.Bellarbi Univ. des Sciences et Techniques de Lille Flandres Ar tois Villeneuve dAscq Cedex France;A.Lorriaux Univ. des Sciences et Techniques de Lille Flandres Ar tois Villeneuve dAscq Cedex France;B.Grimbert Univ. des Sciences et Techniques de Lille Flandres Ar tois Villeneuve dAscq Cedex France.
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
18.Raman spectroscopy of delta-doped GaAs layers and wires (Invited Paper)

机译：三角掺杂GaAs层和电线的拉曼光谱（邀请纸）
- 作者：Joachim Wagner
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
19.In-situ characterization of thin film semiconductors by spectroellipsometry from ultraviolet to infrared

机译：通过紫外线到红外线的光谱梭子仪的原位表征薄膜半导体
- 作者：Bernard Drevillon
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
20.New technique for obtaining the electroreflectance spectrum: vacuum electroreflectance (Poster Paper)

机译：用于获得电气反射谱的新技术：真空电气反射（海报纸）
- 作者：Silvia L. Mioc;Paul M. Raccah;James W. Garland
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
21.Effect of annealing on Fermi level pinning of low-temperature molecular-beam epitaxial GaAs

机译：退火对低温分子束外延GaAs的费米水平钉扎的影响
- 作者：Hongen Shen;J.Pamulapati U.S. Army Electronics Technology and Devices Lab. Fort Monmouth NJ USA;Robert A. Lux;Mitra Dutta;F.C. Rong;Monica A. Taysing-Lara;L.Fotiadis GEO Centers Inc. Lake Hopatcong NJ USA;L.Calderon Rutgers Univ. Piscataway NJ USA;Yicheng Lu
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
22.Dielectric functions and critical point transitions of single strained and relaxed InxGa1-xAs/GaAs epilayers studied by spectroscopic ellipsometry and photoreflectance

机译：通过光谱椭圆形测定和光学反射研究单应变和宽松的inxga1-XAS / GaAs剖视图的介电功能和临界点转变
- 作者：Roger T. Carline;Chris Pickering;N.S. Garawal;David Lancefield;Leslie K. Howard;M.T. Emeny
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
23.Systematic optical study of InxGa1-xAs on InP using photoluminescence photoreflectance and micro-Raman spectroscopy

机译：用光致发光光反射和微拉曼光谱法对INP INXGA1-XA的系统光学研究
- 作者：Joseph P. Estrera;Walter M. Duncan;Yung C. Kao;H.Y. Liu;Patrick D. Stevens;E.A. Beam
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
24.In-situ and ex-situ ellipsometric characterization for semiconductor technology (Invited Paper)

机译：用于半导体技术的原位和前地椭圆形表征（邀请纸）
- 作者：John A. Woollam;Paul G. Snyder;Huade Yao;Blaine D. Johs
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
25.Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well

机译：11h光反射线在（001）IN0.21GA0.79AS / GaAs单量子中的温度依赖性
- 作者：Hao Qiang;Y.S. Huang;Fred H. Pollak;G.D. Pettit;Jerry M. Woodall
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
26.Luminescence properties of Al0.48In0.52As under hydrostatic pressure

机译：静水压压力下Al0.48in0.52As的发光性质
- 作者：Hai-Ping Zhou;Clivia M. Sotomayor Torres
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
27.Implementation of a polarization modulation technique in a photoluminescence and photoluminescence excitation measurement setup

机译：光致发光和光致发光激励测量设置中的偏振调制技术的实现
- 作者：Matthias Wassermeier;Helge Weman;M.S. Miller;Pierre M. Petroff;James L. Merz
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
28.Magneto-optical studies of highly excited quantum wells (Invited Paper)

机译：高励磁量子孔的磁光研究（邀请纸）
- 作者：Vladimir D. Kulakovskii
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
29.Properties and structures of Fe-based metallic thin films in amorphous and crystalline forms (Poster Paper)

机译：无定形和结晶形式的Fe系金属薄膜的性质和结构（海报纸）
- 作者：Khaled J. Habib
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
30.High-resolution x-ray diffraction analysis of thin III-V layers and quantum wires (Invited Paper)

机译：薄III-V层和量子线（邀请纸）的高分辨率X射线衍射分析
- 作者：Leander Tapfer
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1992年
31.Optical study of lift-off multiple quantum well thin films under various types of thermally induced in-plane strain

机译：各种类型热诱导的面内应变下剥离多量子阱薄膜的光学研究
- 作者：Hongen Shen;M.Wraback U.S. Army Research Lab. Fort Monmouth NJ USA;J.Pamulapati U.S. Army Research Lab. Fort Monmouth NJ USA;Monica A. Taysing-Lara;Weimin Zhou;Mitra Dutta;Yu C. Lu;H.C. Kuo
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
32.Effects of P4 annealing on ordered Ga0.52In0.48P

机译：P4退火对订购GA0.52IN0.48P的影响
- 作者：Xiaoming Yin;Matthew C. DeLong;Q.Li Univ. of Utah Salt Lake City UT USA;P.C. Taylor;Hei-Ruey H. Jen;Jeannie E. Williams;Kathleen Meehan
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
33.Photoreflectance study of the chemically modified (100) GaAs surface

机译：化学改性（100）GaAs表面的光学反射研究
- 作者：Orest J. Glembocki;Judah A. Tuchman;K.K. Ko;Stella W. Pang;John A. Dagata;Adriana Giordana;R.Kaplan Naval Research Lab. Washington DC USA;Charles E. Stutz
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
34.Investigation of doped multiple quantum well structures using modulation spectroscopy

机译：使用调制光谱研究对掺杂多量子阱结构的研究
- 作者：Author(s): R.Goldhahn Technische Univ. Ilmenau Ilmenau Federal Republic of Germany;Gerhard Gobsch;J.M. Chamberlain;M.Henini Univ. of Nottingham Nottingham United Kingdom;A.F. Jezierski;N.Stein Technische Univ. Ilmenau Ilmenau Federal Republic of Germany;M.Trott Technische Univ. Ilmenau Ilmenau Federal Republic of Germany;V.Nakov Technische Univ. Ilmenau Ilmenau Federal Republic of Germany.
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
35.Lateral confinement effects in the luminescence of ultranarrow InGaAs/InP quantum wires

机译：超声波IngaAs / InP量子线的发光中的横向限制效应
- 作者：Frank Kieseling;P.Ils Univ. Wuerzburg Wuerzburg Federal Republic of Germany;M.Michel Univ. Wuerzburg Wuerzburg Federal Republic of Germany;Alfred W. Forchel;I.Gyuro Alcatel-SEL Stuttgart Federal Republic of Germany;M.Klenk Alcatel-SEL Stuttgart Federal Republic of Germany;E.Zielinski Alcatel-SEL Stuttgart Federal Republic of Germany.
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
36.Measurement of ion-induced damage profiles in GaAs using modulation spectroscopy

机译：使用调制光谱测量GaAs中的离子诱导损伤曲线
- 作者：Michael Gal;P.Kraisingdecha Univ. of New South Wales Kensington New South Wales Australia;Chit Shwe
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
37.Electronic optical properties of the condensed medium

机译：冷凝介质的电子光学性能
- 作者：Nadezhda P. Netesova
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
38.Use of optical characterization for optimization of epitaxial growth

机译：光学特征对外延生长的优化
- 作者：Gary W. Wicks
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
39.Light emission properties of porous Si

机译：多孔Si的发光特性
- 作者：Sharka M. Prokes
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
40.Characterization by line-shape analysis of photoreflectance spectra for modulation-doped strained quantum wells

机译：通过对调制掺杂应变量子阱的光反射光谱线形状分析的表征
- 作者：Godfrey Gumbs;Danghong Huang
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
41.Electroreflectance line-shape analysis for coupled GaAs-AlAs superlattices in strong electric fields

机译：电磁场耦合GaAs-Alas超晶片的电气反射线形分析
- 作者：Udo Behn;Holger T. Grahn;Klaus H. Ploog
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
42.Interface disorder effects on confined phonons in semiconductor microstructures

机译：界面紊乱对半导体微结构中限制声子的影响
- 作者：Author(s): B.Jusserand CNET Lab. de Bagneux Bagneux France.
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
43.Characterization of very thin MBE-grown Ge epilayers on (001) Si

机译：（001）Si上非常薄的MBE-生长的GE epilayers的表征
- 作者：Wolfgang Kissinger;Hans J. Osten;G.Lippert Institute of Semiconductor Physics Frankfurt Oder Federal Republic of Germany;Burghard Dietrich;Eberhard Bugiel
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
44.Optical characterization of light-emitting porous silicon

机译：发光多孔硅的光学特征
- 作者：Philippe M. Fauchet;L.Tsybeskov Univ. of Rochester Rochester NY USA;Jury V. Vandyshev;A.Dubois Univ. of Rochester Rochester NY USA;C.Peng Univ. of Rochester Rochester NY USA.
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
45.Optical determination of (partial) ordering in ordered alloys

机译：有序合金中（部分）排序的光学测定
- 作者：Judah A. Tuchman;Orest J. Glembocki;R.S. Sillmon;E.R. Glaser;M.E. Twigg
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
46.Reflection high-energy electron diffraction studies of epitaxial growth on corrugated semiconductor surfaces

机译：瓦楞膜半导体表面上外延生长的反射高能电子衍射研究
- 作者：Lutz Daeweritz;Richard Noetzel;Klaus H. Ploog
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
47.Characterization of semiconductor device structures by modulation spectroscopy

机译：调制光谱法对半导体器件结构的表征
- 作者：Hao Qiang;Dong Yan;Yichun Yin;Fred H. Pollak
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
48.Correlation of optical x-ray and electron microscopy measurements on semiconductor multilayer structures

机译：光学X射线和电子显微镜测量对半导体多层结构的相关性
- 作者：David H. Christensen;Robert K. Hickernell;David T. Schaafsma;J.G. Pellegrino;Mark J. McCollum;James R. Hill;R.S. Rai
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
49.Spectroscopic ellipsometry of undulated bonded silicon-on-insulator structures with oxide-nitride-oxide layers

机译：具有氧化物 - 氮化物氧化物层的波状键合硅与氧化物层的光谱椭圆形状
- 作者：Magdi E. El-Ghazzawi;Tadashi Saitoh
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年
50.Optical processes in quantum dots and wires

机译：量子点和线中的光学过程
- 作者：Clivia M. Sotomayor Torres;Pei D. Wang;N.N. Ledentsov;Yin-Sheng Tang
- 会议名称：《Conference on spectroscopic characterization techniques for semiconductor technology》 | 1994年