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首页> 外文期刊>Physics Letters, A >Dynamic scaling of the growth process deposited on sapphire substrates of GaN thin films by HVPE
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Dynamic scaling of the growth process deposited on sapphire substrates of GaN thin films by HVPE

机译：通过HVPE动态沉积在GaN薄膜蓝宝石衬底上的生长过程

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摘要

The growth front evolution of gallium nitride (GaN) thin films deposited on sapphire substrates by HVPE has been studied with atomic force microscope (AFM). The dynamic scaling characteristics are observed during the deposition process. After numerical correlation analysis, the roughness exponent alpha = 0.75 and the growth exponent beta = 0.59 are obtained by using selfaffine model. The roughening mechanisms of GaN thin films has been simply investigated, and the results indicate that one or more roughening mechanisms are present in the growth process in addition to stochastic roughening and diffusion effect. The computed values of the correlations in the input noise are very close to our results. (C) 2004 Published by Elsevier B.V.
机译：利用原子力显微镜（AFM）研究了HVPE沉积在蓝宝石衬底上的氮化镓（GaN）薄膜的生长前沿演化。在沉积过程中观察到动态缩放特性。经过数值相关分析，通过使用自仿射模型获得粗糙度指数α= 0.75和生长指数β= 0.59。简单地研究了GaN薄膜的粗糙化机理，结果表明，在生长过程中，除了随机的粗糙化和扩散效应外，还存在一种或多种粗糙化机理。输入噪声中相关性的计算值非常接近我们的结果。 （C）2004由Elsevier B.V.发布

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