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首页> 外文期刊>Plasma Sources Science & Technology >Chlorine plasma and polysilicon etch characterization in an inductively coupled plasma etch reactor
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Chlorine plasma and polysilicon etch characterization in an inductively coupled plasma etch reactor

机译：电感耦合等离子体蚀刻反应器中氯等离子体和多晶硅蚀刻的表征

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摘要

Measurements of the plasma properties versus location, pressure and power have been made in chlorine plasmas using a compensated Langmuir probe. The locations included a plane 1 cm below the window on which the inductively coupled plasma source rests (power deposition plane) and 1 cm above the wafer electrode (wafer plane). The pressures were varied between 1 and 25 mTorr and the RF power was varied between 200 and 900 W at 13.56 MHz. Spatial profiles of the electron and positive ion densities indicate that the plasma source efficiently heated electrons where the source induced electric fields were most intense. This caused a large variation in the electron average energy (T-e) both along the diameter of the power deposition plane and between the power deposition and wafer planes. Where T-e was largest, n(e) was found to be smallest and vice versa. Spatial profiles of the electron density and T-e at the wafer plane were dramatically more uniform. In addition, a comparison between polysilicon etch profiles on 150 mm wafers and plasma characteristics at the wafer plane revealed that the ion density always peaked on axis while the etch rate tended to peak at the radial edge.
机译：使用补偿的Langmuir探针已在氯气等离子体中测量了等离子体特性与位置，压力和功率的关系。这些位置包括一个窗口，在窗口下方1厘米处放置感应耦合等离子体源（功率沉积平面），在晶圆电极上方1厘米平面（晶圆平面）。在13.56 MHz下，压力在1至25 mTorr之间变化，RF功率在200至900 W之间变化。电子和正离子密度的空间分布图表明，等离子体源在源感应电场最强的地方有效地加热了电子。这导致沿着功率沉积平面的直径以及在功率沉积和晶片平面之间的电子平均能量（T-e）有很大的变化。在T-e最大的地方，n（e）被发现最小，反之亦然。晶片平面上电子密度和T-e的空间分布显着更均匀。此外，在150毫米晶圆上的多晶硅蚀刻轮廓与晶圆平面上的等离子体特性之间的比较显示，离子密度始终在轴上达到峰值，而蚀刻速率则在径向边缘趋于峰值。

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