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首页> 外文期刊>Progress in photovoltaics >High aspect ratio electrodeposited Ni/Au contacts for GaAs-based III-V concentrator solar cells
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High aspect ratio electrodeposited Ni/Au contacts for GaAs-based III-V concentrator solar cells

机译：GaAs基III-V聚光太阳能电池的高深宽比电沉积Ni / Au触点

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摘要

We report on a photolithographic and electro-deposition process that results in an optimized front grid structure for high efficiency multi-junction III-V concentrator solar cells operating under flux concentrations up to 1000 suns. Two different thick photoresists were investigated to achieve a 6 mu m wide grid line with an aspect ratio of 1:1. A positive photoresist, SPR220 manufactured by Rohm and Haas was compared with a negative photoresist, nXT15 manufactured by AZ. A gold sulfite electrolyte was employed to prevent underplating as well as for environmental and safety considerations. An initial layer of nickel was discovered to be necessary to prevent delamination of the fingers during the removal of the contact layer. When deposited on a purpose grown, heavily doped GaAs contact layer, this Ni/Au contact exhibits an acceptable specific contact resistance in the low 10(-4) to mid 10(-5) Ohm cm(2) range along with excellent adhesion without sintering. Copyright (c) 2014 John Wiley & Sons, Ltd.
机译：我们报道了一种光刻和电沉积过程，该过程可为通量浓度高达1000太阳的高效多结III-V聚光器高效太阳能电池提供优化的前栅极结构。研究了两种不同的厚光致抗蚀剂，以获得宽高比为1：1的6微米宽的网格线。将由Rohm and Haas制造的正光刻胶SPR220与由AZ制造的负光刻胶nXT15进行比较。为了防止镀底以及出于环境和安全考虑，使用了亚硫酸金电解质。发现必须有一层镍的初始层，以防止在去除接触层期间手指脱层。当沉积在目的生长的重掺杂GaAs接触层上时，此Ni / Au接触层在10（-4）到10（-5）Ohm cm（2）的低范围内显示出可接受的比接触电阻，并且具有出色的附着力烧结。版权所有（c）2014 John Wiley＆Sons，Ltd.

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