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首页> 外文期刊>The European physical journal. Applied physics >Superconducting Cu_2Mo_6S_8 thin films deposited in-situ by laser ablation on R-plane sapphire
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Superconducting Cu_2Mo_6S_8 thin films deposited in-situ by laser ablation on R-plane sapphire

机译：R平面蓝宝石上通过激光烧蚀原位沉积的超导Cu_2Mo_6S_8薄膜

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摘要

This films of Cu_2Mo_6S_8 have been in-situ deposited by pulsed laser deposition on R-plane Al_2O_3 on which an epitaxial growth has been achieved for the first time, with the (100)_R orientation, as shown by X-ray diffraction. The superconducting transition temperature has been determined from DC resistive and AC susceptibility measurements. The critical temperature T_c is typically between 9.5 and 10.3 K and the transitions are narrow: the full width at half maximum of the inductive signal χ" ranges between 0.1 and 0.5 K. The critical current densities have been obtained by standard four probe electrical measurements: in zero field a value larger than 10~8 A/m~2 has been measured at only 1 K from the end of the transition, and values typically larger than 10~7 A/m~2 at 4.2 K in an applied magnetic field of 7 T have been observed. The upper critical magnetic filed, B_(c2), has been determined from the critical current measurements performed at 4.2 K in an applied magnetic field, for two samples. The experimental values of 11 and 12.5 T at 4.2 are close to those reported on bulk samples (12.5 T). For the first time to our knowledge a surface resistance (R_s) measurement has been carried out on a Chevrel phase-type compound: a value of 4.5 mΩ at 10 GHz and 4.2 K has been obtained.
机译：通过脉冲激光沉积将Cu_2Mo_6S_8的薄膜原位沉积在R平面Al_2O_3上，该薄膜首次以（100）_R取向实现外延生长，如X射线衍射所示。根据直流电阻和交流磁化率测量值确定超导转变温度。临界温度T_c通常在9.5和10.3 K之间，过渡很窄：感应信号χ“的一半最大宽度在0.1和0.5 K之间。临界电流密度是通过标准的四个探针电测量获得的：在零场中，从转换结束起仅在1 K处测量到的值大于10〜8 A / m〜2，在施加磁场的情况下，在4.2 K处，该值通常大于10〜7 A / m〜2观测到了7 T的磁场强度，由两个样品在施加磁场的4.2 K下进行的临界电流测量确定了上临界磁场B_（c2），在4.2的实验值分别为11 T和12.5 T接近于散装样品（12.5 T）上报道的结果。据我们所知，这是首次对Chevrel相型化合物进行了表面电阻（R_s）测量：在10 GHz和4.2 K时值为4.5mΩ已获得。

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