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首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Desorption of Arsenic Species during the Surfactant Enhanced Growth of Ge on Si(100)
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Desorption of Arsenic Species during the Surfactant Enhanced Growth of Ge on Si(100)

机译：表面活性剂中砷的解吸增强了Si（100）上Ge的生长

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摘要

The desorption and scattering of As_4 and As_2 species from the surface during the growth of germanium films on Si(100) with continuous As_4 deposition is monitored using laser ionization time-of-flight mass spectrometry. A significant increase in the flux of As_2 from the surface is observed when the Ge flux is admitted to the surface. Upon discontinuation of the germanium growth process, the As_4 and As_2 signal levels remain at this increased level. A comprehensive study of the desorption fluxes of As_4, As_2, and As species from both Ge(100) and Si(100) substrates was performed as a function of substrate temperature and incident As_4 flux to determine the kinetics of desorption of the different species from the substrates. The behavior of the As_2 desorbed fluxes as a function of surface temperature is qualitatively different on the Ge(100) and Si(100) substrates. The results indicate that the catalytic cracking of As_4 to As_2 is more effective on Ge(100) compared to Si(100) at substrate temperatures between 800 and 1000 K, most likely because of more rapid desorption of As_2 at a given temperature on Ge (100). A phenomenological activation energy for the desorption of As atoms from Ge(100) of 1.2 ± 0.4 eV is also obtained. The implications for the surfactant enhanced growth of Ge on Si(100) are discussed.
机译：使用激光电离飞行时间质谱法监测在连续连续的As_4沉积下Si（100）上锗膜的生长过程中，As_4和As_2物种从表面的解吸和散射。当Ge通量进入表面时，观察到来自表面的As_2通量显着增加。在锗生长过程中断后，As_4和As_2信号水平保持在该增加水平。全面研究了Ge（100）和Si（100）衬底中As_4，As_2和As物种的解吸通量与衬底温度和入射As_4通量的关系，以确定不同物种从中解吸的动力学。基板。在Ge（100）和Si（100）衬底上，As_2解吸通量的行为随表面温度的变化在质量上有所不同。结果表明，在800至1000 K的衬底温度下，与Si（100）相比，As_4对As_2的催化裂化对Ge（100）更有效，这很可能是由于在给定温度下As_2在Ge（100 100）。还获得了从Ge（100）解吸As原子的现象学活化能为1.2±0.4 eV。讨论了表面活性剂增强Ge在Si（100）上的生长的意义。

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