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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Application of Infrared Interferometry for Quantitative Analysis of Chemical Groups Grafted onto the Internal Surface of Porous Silicon Nanostructures
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Application of Infrared Interferometry for Quantitative Analysis of Chemical Groups Grafted onto the Internal Surface of Porous Silicon Nanostructures

机译:红外干涉法在多孔硅纳米结构内表面接枝化学基团定量分析中的应用

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摘要

The internal surface of porous silicon (PS) nanostructures was chemically modified by octadecyl and carboxylic acid groups by applying the hydrosilylation reaction as well as by aminopropyl and vinyl groups applying the silanization reaction. Concentrations of the chemically grafted groups and thicknesses of grafted layers were determined by measurements of PS refractive index in the infrared spectral range. The Landau-Lifshitz- Looyenga effective media model was used to relate the measured refractive index values to a volume fraction and then to the concentration of the grafted groups. The described quantitative method was applied to determine the sensitivity limits of PS-based sensing devices.
机译:多孔硅(PS)纳米结构的内表面通过应用氢化硅烷化反应通过十八烷基和羧酸基团以及通过进行硅烷化反应通过氨丙基和乙烯基基团进行化学修饰。化学接枝基团的浓度和接枝层的厚度通过测量红外光谱范围内的PS折射率来确定。使用Landau-Lifshitz-Looyenga有效介质模型将测得的折射率值与体积分数相关,然后与接枝基团的浓度相关。所描述的定量方法被应用于确定基于PS的传感设备的灵敏度极限。

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