A new way of fabricating luminescent silicon crystallites by excimer laser annealing of a-Si:H

WU Wei; HUANG Xinfan; LI Zhifeng; CHEN Kunji; CHEN Xiaoyuan; LIU Zhiguo

首页> 外文期刊>Chinese science bulletin >A new way of fabricating luminescent silicon crystallites by excimer laser annealing of a-Si:H

【24h】

A new way of fabricating luminescent silicon crystallites by excimer laser annealing of a-Si:H

机译：a-Si：H的准分子激光退火制备发光硅微晶的新方法

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Si is an important material for manufacturing chips of microelectronic integrated circuits and transistors, Special Si devices can be used as the base materials for optical transmitters and detectors. However, as crystalline Si is an indirect band gapmaterial and its energy gap is only 1.12eV, it is not able to emit efficient visible light; this limits its application in the area of photoelectric devices. To explore visible light-emission from Si-based materials is a great task in the field of materials science.

机译：Si是制造微电子集成电路和晶体管芯片的重要材料，特殊的Si器件可用作光发射器和检测器的基础材料。然而，由于晶体硅是一种间接的带隙材料，并且其能隙仅为1.12eV，因此它不能发射有效的可见光。这限制了它在光电器件领域的应用。探索硅基材料的可见光发射是材料科学领域的一项艰巨任务。

著录项

来源
《Chinese science bulletin》 |1996年第13期|共5页
作者
WU Wei; HUANG Xinfan; LI Zhifeng; CHEN Kunji; CHEN Xiaoyuan; LIU Zhiguo;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类自然科学现状及发展;
关键词
excimer laser; crystallization; nano-size Si;

机译：准分子激光;结晶;纳米尺寸硅;

相似文献

外文文献
中文文献
专利

1. A new way of fabricating luminescent silicon crystallites by excimer laser annealing of a-Si:H [J] . WU Wei, HUANG Xinfan, LI Zhifeng, Chinese science bulletin . 1996,第13期

机译：a-Si：H的准分子激光退火制备发光硅微晶的新方法
2. Characteristics of Thin-Film Transistors Fabricated by the Excimer Laser-Annealed Amorphous Silicon in Ultralow Oxygen Concentrations [J] . Lee Hong-Chan, Kim Kyoung-Bo, Kim Moojin Journal of nano research . 2017,第期

机译：准分子激光退火的非晶硅在超低氧浓度下制造的薄膜晶体管的特性
3. High-Performance Polycrystalline Silicon Thin-Film Transistors Fabricated by High-Temperature Process with Excimer Laser Annealing [J] . Hiroaki JIROKU, Mitsutoshi MIYASAKA, Satoshi INOUE, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第6A期

机译：准分子激光退火高温工艺制备的高性能多晶硅薄膜晶体管
4. In-Situ and Ex-Situ Measurements on Silicon Thin Films Fabricated by Excimer Laser Annealing [C] . Chil-Chyuan Kuo, Wen-Chang Yeh, Ji-Feng Lee, 4th international symposium on instrumentation science and technology . 2006

机译：准分子激光退火制备的硅薄膜的原位和异位测量
5. Laser beam processing of silicon: Aspects of laser annealing and study of laser recrystallization for silicon-on-insulator material and devices [D] . Wouters, Dirk 1989

机译：硅的激光束处理：绝缘体上硅材料和器件的激光退火和激光重结晶研究
6. The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing [O] . Min-Hung Lee, Pin-Guang Chen 2012

机译：准分子激光退火形成的选择性预图案自由自组装Ge纳米点的研究
7. Optimisation of ITO by Excimer Laser Annealing for a-Si:H/c-Si Solar Cells [O] . Nicolás S. Martín de, Muñoz D., Denis C., 2012

机译：准分子激光退火对a-Si：H / c-Si太阳能电池ITO的优化
8. Excimer Laser Annealing to Fabricate Low Cost Solar Cells. Quarterly Technical Report No. 3, October 1-December 31, 1984 [R] . Greenwald, A. C. 1985

机译：准分子激光退火制造低成本太阳能电池。 1984年10月1日至12月31日第3号季度技术报告

A new way of fabricating luminescent silicon crystallites by excimer laser annealing of a-Si:H

摘要

著录项

相似文献

相关主题

期刊订阅