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首页> 外文期刊>Chinese physics letters >Molecular Beam Epitaxy Growth and Photoluminescence of Type-II (GaAs_(1-x)Sb_x/In_yGa_(1-y)As)/GaAs Bilayer Quantum Well
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Molecular Beam Epitaxy Growth and Photoluminescence of Type-II (GaAs_(1-x)Sb_x/In_yGa_(1-y)As)/GaAs Bilayer Quantum Well

机译：分子束外延生长和II型（GaAs_（1-x）Sb_x / In_yGa_（1-y）As）/ GaAs双层量子阱的光致发光

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摘要

We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs_(1-x)Sb_x/In_y Ga_(1-y)As)/GaAs bilayer quantum well (BQW) structures. It is shown that the growth temperature of the wells and the sequence of layer growth have significant influence on the interface quality and the subsequent photoluminescence (PL) spectra. Under optimized growth conditions, three high-quality (GaAsSb_(0.29)/In_(0.4)GaAs)/GaAs BQWs are successfully fabricated and a room temperature PL at 1314 nm is observed. The transition mechanism in the BQW is also discussed by photoluminescence and photoreflectance measurements. The results confirm experimentally a type-II band alignment of the interface between the GaAsSb and InGaAs layers.
机译：我们报告了分子束外延生长和（GaAs_（1-x）Sb_x / In_y Ga_（1-y）As）/ GaAs双层量子阱（BQW）结构的光学性质的系统研究。结果表明，孔的生长温度和层的生长顺序对界面质量和随后的光致发光（PL）光谱有显着影响。在优化的生长条件下，成功制造了三种高质量的（GaAsSb_（0.29）/ In_（0.4）GaAs）/ GaAs BQW，并观察到1314 nm的室温PL。还通过光致发光和光反射率测量来讨论BQW中的过渡机制。该结果在实验上证实了GaAsSb和InGaAs层之间界面的II型能带对准。

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