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首页> 外文期刊>Chinese physics letters >Enhancement of second- and third-order nonlinear optical susceptibilities in magnetized semiconductors
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Enhancement of second- and third-order nonlinear optical susceptibilities in magnetized semiconductors

机译：磁化半导体中二阶和三阶非线性光学磁化率的增强

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摘要

Using electromagnetic treatment, an expression of effective nonlinear optical susceptibility chi(e)[= chi((2))(e) + chi((3))(e) E] is obtained for III-V semiconducting crystals in an applied transverse dc magnetic field under off-resonant transition regime. The origin of nonlinear interaction lies in nonlinear polarization arising from the crystal properties such as piezoelectricity and electrostriction. Numerical estimates have been made by a representative n-InSb crystal at 77K duly irradiated by a pulsed 10.6-mu m CO2 laser under off-resonant transition regime. Efforts are dedicated to optimizing doping level and externally applied dc magnetic field to achieve maximum chi((2))(e) and chi((3))(e). The results are found to be in good agreement with the available literature. The analysis shows that chi((2))(e) and chi((3))(e) can be significantly enhanced in doped III-V semiconductors by the proper selection of doping concentration and dc magnetic field, which confirms its potential as a candidate material for the fabrication of nonlinear optical devices.
机译：通过电磁处理，获得了在施加的横向方向上III-V型半导体晶体的有效非线性光学磁化率chi（e）[= chi（（2））（e）+ chi（（3））（e）E]的表达式失谐跃迁状态下的直流磁场。非线性相互作用的起源在于由诸如压电性和电致伸缩之类的晶体特性引起的非线性极化。在非共振跃迁下，用脉冲的10.6微米CO2激光适当辐照了77K的代表性n-InSb晶体，并进行了数值估算。致力于优化掺杂水平和外部施加的直流磁场以实现最大chi（（2））（e）和chi（（3））（e）。发现结果与现有文献非常吻合。分析表明，通过适当选择掺杂浓度和直流磁场，可以在掺杂的III-V半导体中显着提高chi（（2））（e）和chi（（3））（e），这证实了其潜力一种用于制造非线性光学器件的候选材料。

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