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首页> 外文期刊>Chinese physics letters >A novel fully depleted air AlN silicon-on-insulator metal-oxide-semiconductor field effect transistor
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A novel fully depleted air AlN silicon-on-insulator metal-oxide-semiconductor field effect transistor

机译：一种新型的完全耗尽空气AlN绝缘体上硅金属氧化物半导体场效应晶体管

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摘要

A novel fully depleted air AlN silicon- on- insulator (SOI) metal - oxide - semiconductor field elect transistor (MOSFET) is presented, which can eliminate the self- heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The of state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28 mV, so the threshold voltage change induced by employing high thermal conductivity material is cured.
机译：提出了一种新型的完全耗尽空气AlN绝缘体上硅金属氧化物半导体场效应晶体管（MOSFET），可以消除自热效应并解决SOI MOSFET的关态电流增大的问题。当采用高导热率材料作为掩埋层时，阈值电压特性变差。仿真结果表明，普通SOI器件的晶格温度比大气温度高75K，而晶格温度仅比大气温度高4K，导致空气AlN SOI MOSFET和AlN SOI MOSFET的自热效应不太严重。空气AlN SOI MOSFET的导通状态电流类似于AlN SOI结构，比普通SOI MOSFET的导通电流提高了12.3％。 AlN SOI的状态电流是普通SOI MOSFET的6.7倍，而空气AlN SOI MOSFET的状态电流要比SOI MOSFET低两个数量级。具有不同漏极电压的空气AlN SOI MOSFET的阈值电压变化远小于AlN SOI器件的阈值电压变化，当漏极电压偏置在0.8 V时，该差值为28 mV，因此，采用高导热率会导致阈值电压变化材料被固化。

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